Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns=2.8×1014\,cm−2) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.
@article{arxiv.1802.05208,
title = {2D-3D crossover in a dense electron liquid in silicon},
author = {Guy Matmon and Eran Ginossar and Byron J. Villis and Alex Kölker and Tingbin Lim and Hari Solanki and Steven R. Schofield and Neil J. Curson and Juerong Li and Ben N. Murdin and Andrew J. Fisher and Gabriel Aeppli},
journal= {arXiv preprint arXiv:1802.05208},
year = {2018}
}