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Related papers: 2D-3D crossover in a dense electron liquid in sili…

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An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…

Condensed Matter · Physics 2007-05-23 M. A. Zudov , C. L. Yang , R. R. Du , T. -C. Shen , J. -Y. Ji , J. S. Kline , J. R. Tucker

We study the dimensional crossover of weak localization in strongly anisotropic systems. This crossover from three-dimensional behavior to an effective lower dimensional system is triggered by increasing temperature if the phase coherence…

Disordered Systems and Neural Networks · Physics 2009-10-30 C. Mauz , A. Rosch , P. Woelfle

The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report…

Materials Science · Physics 2019-06-13 M. T. Dau , C. Vergnaud , M. Gay , C. J. Alvarez , A. Marty , C. Beigné , D. Jalabert , J. -F. Jacquot , O. Renault , H. Okuno , M. Jamet

Electronic transport in highly doped but still insulating silicon at low temperatures is dominated by hopping between localized states; it serves as a model system of a disordered solid for which the electronic interaction can be…

Strongly Correlated Electrons · Physics 2007-05-23 Marco Hering , Marc Scheffler , Martin Dressel , Hilbert v. Lohneysen

Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO2/Si interface as a function of underlying doping pattern. Using a spectroscopic…

Materials Science · Physics 2012-11-21 F. de la Peña , N. Barrett , L. F. Zagonel , M. Walls , O. Renault

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

Materials Science · Physics 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

Superconducting structures with the size of the order of the superconducting coherence length xi(T) have a critical temperature T_c, oscillating as a function of the applied perpendicular magnetic field H (or flux Phi). For a thin-wire…

Superconductivity · Physics 2009-10-31 V. Bruyndoncx , L. Van Look , M. Verschuere , V. V. Moshchalkov

The theoretical framework, which is built from the first-principles results, is successfully developed for investigating emergent two-dimensional (2D) materials, as it is clearly illustrated by carbon substitution in silicene. Computer…

Computational Physics · Physics 2019-12-03 Hai-Duong Pham , Shih-Yang Lin , Godfrey Gumbs , Nguyen Duy Khanh , Ming-Fa Lin

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…

Layered magnetic transition-metal thiophosphate NiPS3 has unique two-dimensional (2D) magnetic properties and electronic behavior. The electronic band structure and corresponding magnetic state are expected to sensitive to the interlayer…

Strongly Correlated Electrons · Physics 2020-09-30 Xiaoli Ma , Yimeng Wang , Yunyu Yin , Binbin Yue , Jianhong Dai , Jianting Ji , Feng Jin , Fang Hong , Jian-Tao Wang , Qingming Zhang , Xiaohui Yu

We use angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of CaFe2As2 - parent compound of a pnictide superconductor. We find that the structural and magnetic transition is accompanied by a three- to…

Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si…

Materials Science · Physics 2018-02-14 Oleksandr I. Malyi , Kostiantyn V. Sopiha , Ihor Radchenko , Ping Wu , Clas Persson

The induction of unconventional superconductivity by twisting two layers of graphene a small angle was groundbreaking1, and since then has attracted widespread attention to novel phenomena caused by lattice or angle mismatch between…

Mesoscale and Nanoscale Physics · Physics 2020-09-21 Yuqi Wang , Soroush Arabi , Klaus Kern , Markus Ternes

Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…

Materials Science · Physics 2026-02-26 Quinn T. Campbell , Andrew D. Baczewski , Shashank Misra , Evan M. Anderson

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…

Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by…

Mesoscale and Nanoscale Physics · Physics 2014-09-16 A. Carvalho , A. H. Castro Neto

Metasurfaces are two-dimensional optical structures enabling complete control of the amplitude, phase, and polarization of light. Unlike plasmonic metasurfaces, planar silicon structures facilitate high transmission, low losses and…

Recent advances in ferroelectrics highlight the role of three-dimensional (3D) polar entities in forming topological polar textures and generating giant electromechanical responses, during polarization rotation. However, current electron…

Materials Science · Physics 2025-06-10 Jinho Byun , Keeyong Lee , Myoungho Jeong , Eunha Lee , Jeongil Bang , Haeryong Kim , Geun Ho Gu , Sang Ho Oh

Silicon-based two-dimensional (2D) materials, including well-known silicene, have garnered considerable attention due to their potential in advanced electronic and optoelectronic applications. Here, we introduce a novel 2D silicon variant,…

Materials Science · Physics 2023-11-02 K. A. L. Lima , L. A. Ribeiro
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