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We have proposed the superfluidity of dipolar excitons in a strip of double-layer transition metal dichalcogenides (TMDCs) heterostructures. We have shown that strain causes a shift in k-space between the minimum of the conduction band and…

介观与纳米尺度物理 · 物理学 2025-04-08 Gabriel Pimenta Martins , Oleg L. Berman , Godfrey Gumbs , Gabriele Grosso

We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the…

介观与纳米尺度物理 · 物理学 2020-06-23 Adrián Ceferino , Kok Wee Song , Samuel J. Magorrian , Viktor Zólyomi , Vladimir I. Fal'ko

Dark excitons in transition metal dichalcogenides (TMD) have been so far neglected in the context of polariton physics due to their lack of oscillator strength. However, in tungsten-based TMDs, dark excitons are known to be the…

Phonons are well known to be the main mechanism for the coupling between bright and dark excitons in nonmagnetic semiconductors. Here, we investigate diluted magnetic semiconductors where this process is in direct competition with the…

介观与纳米尺度物理 · 物理学 2019-03-12 Florian Ungar , Moritz Cygorek , Vollrath Martin Axt

The interaction of optically excited excitons in atomically thin semiconductors with residual doping densities leads to many-body effects which are continuously tunable by external gate voltages. Here, we develop a fully microscopic theory…

介观与纳米尺度物理 · 物理学 2022-01-07 Florian Katsch , Andreas Knorr

Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…

材料科学 · 物理学 2026-02-17 Amir Kleiner , Sivan Refaely-Abramson

Layered transition metal dichalcogenides (TMDCs) host a variety of strongly bound exciton complexes that control the optical properties in these materials. Apart from spin and valley, layer index provides an additional degree of freedom in…

介观与纳米尺度物理 · 物理学 2019-05-08 Sarthak Das , Garima Gupta , Kausik Majumdar

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large…

As the bound state of two oppositely charged particles, excitons emerge from optically excited semiconductors as the electronic analogue of a hydrogen atom. In the two-dimensional (2D) case, realized either in quantum well systems or truly…

光学 · 物理学 2022-05-13 Tobias Graß , Utso Bhattacharya , Julia Sell , Mohammad Hafezi

Two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides and their strong light-matter interaction have attracted unrivalled attention by the research community due to their extraordinarily…

介观与纳米尺度物理 · 物理学 2018-12-31 Lorenz Maximilian Schneider , Shanece Esdaille , Daniel Rhodes , Katayun Barmak , James Hone , Arash Rahimi-Iman

The electro-optical properties of most semiconductors and insulators of technological interest are dominated by the presence of electron-hole quasiparticles called excitons. The manipulation of these hydrogen-like quasi-particles in…

Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic…

Semiconducting transition metal dichalcogenides (TMDs), such as MoSe$_2$ and WSe$_2$, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more TMDs, to create heterostructures, has expanded the fields of…

The bound electron-hole pairs known as excitons govern the optical properties of insulating solids. While their behavior in equilibrium is well-understood theoretically, the nonequilibrium regime at high excitation densities-where phenomena…

介观与纳米尺度物理 · 物理学 2025-10-31 Pushpendra Yadav

Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can…

The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in…

Strain in two-dimensional (2D) transition metal dichalcogenide (TMD) has led to localized states with exciting optical properties, in particular in view of designing one photon sources. The naturally formed of the MoS2 monolayer deposed on…

材料科学 · 物理学 2021-03-17 Adlen Smiri , Thierry Amand , Sihem Jaziri

Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we…

介观与纳米尺度物理 · 物理学 2021-11-16 Long Yuan , Biyuan Zheng , Qiuchen Zhao , Roman Kempt , Thomas Brumme , Agnieszka Beata Kuc , Chao Ma , Shibin Deng , Anlian Pan , Libai Huang

Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus…

介观与纳米尺度物理 · 物理学 2017-01-31 W. L. Liu , M. L. Chen , X. X. Li , S. Dubey , T. Xiong , Z. M. Dai , J. Yin , W. L. Guo , J. L. Ma , Y. N. Chen , J. Tan , D. Li , Z. H. Wang , W. Li , V. Bouchiat , D. M. Sun , Z. Han , Z. D. Zhang