相关论文: On the Temperature-dependent Characteristics of Pe…

Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer…

The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as…

A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…

The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their…

Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…

Understanding the damping mechanism in finite size systems and its dependence on temperature is a critical step in the development of magnetic nanotechnologies. In this work, nano-sized materials are modeled via atomistic spin dynamics, the…

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…

The temperature variation effect of shape anisotropy on the coercivity, HC(T), for the aligned Stoner-Wohlfarth (SW) soft ferromagnets, such as fcc Ni, fcc Co and bcc Fe, are investigated within the framework of Neel-Brown (N-B) analysis.…

The behavior of shape memory alloy (SMA) nanostructures is influenced by strain rate and temperature evolution during dynamic loading. The coupling between temperature, strain and strain rate effects is essential to capture inherent…

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…

We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor…

Spin transfer torque from spin-polarized electrical current can excite large-amplitude magnetization dynamics in metallic ferromagnets of nanoscale dimensions. Since magnetic anisotropy energies of nanomagnets are comparable to the thermal…

We predict a huge anisotropic thermal magnetoresistance (ATMR) in the near-field radiative heat transfer between magneto-optical particles when the direction of an external magnetic field is changed with respect to the heat current…

Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…

A model of magnetic interactions in the ordered ferromagnetic FePt is proposed on the basis of first-principles calculations of non-collinear magnetic configurations and shown to be capable of explaining recent measurements of magnetic…