相关论文: Strong magnetoresistance in a graphene Corbino dis…
We explore the magnetohydrodynamics of Dirac fermions in neutral graphene in the Corbino geometry. Based on the fully consistent hydrodynamic description derived from a microscopic framework and taking into account all peculiarities of…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at…
Highly-doped graphene samples show the conductance reduced and the shot-noise power enhanced compared to standard ballistic systems in two-dimensional electron gas. These features can be understood within a model assuming incoherent…
We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears, which is absent in systems with Galilean-invariant electron liquid. The resulting…
We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering…
We have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at…
Electron transport through the Corbino disk in graphene is studied in the presence of uniform magnetic fields. At the Dirac point, we observe conductance oscillations with the flux piercing the disk area $\Phi_d$, characterized by the…
Using the transfer matrix in the angular-momentum space we investigate the impact of trigonal warping on magnetotransport and scaling properties of a ballistic bilayer graphene in the Corbino geometry. Although the conductivity at the…
We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
This is a theoretical study of finite voltage effects on the conductance, the shot noise power, and the third charge-transfer cumulant for graphene-based Corbino disk in the presence of external magnetic fields. Periodic magnetoconductance…
Low frequency resistance variations due to mobility fluctuations is one of the key factors of $1/f$ noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
We have studied the magnetotransport of conical and disk-shaped nanocarbon particles in magnetic fields $\left|B\right|\leq9\:\mathrm{T}$ at temperatures $2\leq T\leq300\:\mathrm{K}$ to characterize electron scattering in a three…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…
We have studied the c-axis interlayer magnetoresistance (ILMR), R_c(B) in graphite. The measurements have been performed on strongly anisotropic highly oriented pyrolytic graphite (HOPG) samples in magnetic field up to B = 9 T applied both…
We study transport properties of clean suspended graphene at the Dirac point. In the absence of the electron-electron interaction, the main contribution to resistivity comes from interaction with flexural (out-of-plane deformation) phonons.…
By computing spin-polarized electronic transport across a finite zigzag graphene ribbon bridging two metallic graphene electrodes, we demonstrate, as a proof of principle, that devices featuring 100% magnetoresistance can be built entirely…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…