相关论文: Voltage-Gate Assisted Spin-Orbit Torque Magnetic R…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…

This paper investigates power swing characteristics of grid-forming voltage source converter (GFM-VSC) systems considering the current limitation mode in both non-inertial and inertial GFM-VSC systems. Following grid faults, non-inertial…

Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so…

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…

Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables…

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…

We have theoretically studied the full counting statistics of electron transport through a single-molecule magnet (SMM) with an arbitrary angle between the applied magnetic field and the SMM's easy axis above the sequential tunneling…

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…

Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…

Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…

As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed,…