相关论文: Phase Change Memory by GeSbTe Electrodeposition in…
Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…
We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon…
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable…
We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are…
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime…
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their…
Two classes of Phase Change Materials (PCMs) have emerged as the best candidates for applications requiring the fast reading and writing of data: GeTe-Sb$_{2}$Te$_{3}$ pseudobinary alloys (group 1) and doped Sb-Te compounds near the…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
An optical equivalent of the field-programmable gate array (FPGA) is of great interest to large-scale photonic integrated circuits. Previous programmable photonic devices relying on the weak, volatile thermo-optic or electro-optic effect…
Phase-change materials (PCMs) can switch between different crystalline states as a function of an external bias, offering a pronounced change of their dielectric function. In order to take full advantage of these features for active…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
Memristive nanodevices offer new frontiers for computing systems that unite arithmetic and memory operations on-chip. Here, we explore the integration of electrochemical metallization cell (ECM) nanodevices with tunable filamentary…
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is…
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…