相关论文: Enhanced spin injection in molecularly functionali…
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
Imprinting magnetism into graphene makes an important step to its applications in spintronics. An actively explored approach is proximity coupling of graphene to a 2D magnet. In these endeavors, the use of epitaxial graphene may bring…
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…
Interlayer twist between van der Waals graphene crystals led to the discovery of superconducting and insulating states near the magic angle. In this work, we exploit this mechanical degree of freedom by twisting the graphene middle layer in…
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and…
Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
Graphene is a very promising material in spintronics due to both its high electric mobility and low intrinsic spin-obit coupling. Electronic spins can be injected from a ferromagnetic material through a tunnel contact into graphene owing to…
We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower…
We report a real-time first-principles study of ultrafast spin injection in a WSe$_2$-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional…
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…
We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was…
Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…
The 2D ferromagnets, such as CrX3 (X=Cl, Br and I), have been attracting extensive attentions since they provide novel platforms to fundamental physics and device applications. Integrating CrX3 with other electrodes and substrates is an…
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…
Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum…
Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in…