相关论文: Coherent Hopping Transport and Giant Negative Magn…
It has been observed that the low temperature magnetoresistance behaviour in polycrystalline colossal magnetoresistive (CMR) manganites differ significantly from the single crystals. The polycrystalline samples show large magnetoresistance…
We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than…
Recently Wagner et al. [Phys. Rev. Lett. Vol. 81, P. 3980 (1998)] proposed that Mott's original model be modified to incorporate a hopping barrier which depends on the misorientation between the spins of electrons at the initial and the…
We present the results of electrical resistivity and Hall effect measurements on single crystals of HfNiSn, TiPtSn, and TiNiSn. Semiconducting behavior is observed in each case, involving the transport of a small number of highly…
The unusual non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + \delta} with excess oxygen has been observed. The resistance is measured as a function of applied voltage U (10^{-3} V - 25 V) in the temperature range 5…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…
Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological…
The quantum localization in the quantum Hall regime is revisited using Graphene monolayers with accurate measurements of the longitudinal resistivity as a function of temperature and current. We experimentally show for the first time a…
Hopping transport, characterized by carrier tunneling between localized states, is a key mechanism in disordered materials such as organic semiconductors, perovskites, nitride alloys, and 2D material-based inks. Two main regimes are…
High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The…
Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of stron spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na2IrO3 thin films with excellent…
Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall…
In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to…
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…
The crossover between two different conduction mechanisms (variable range and small polaron hoppings) is probed utilizing a conjunction of thermally varying conductivity and impedance in polycrystalline Pr2NiTiO6 (PNT). A combination of…
Compared to first principles studies like DFT (physically accurate, computationally expensive), the TB approach allows the disentanglement of the region of interest, to wit the fermi level. This allows the creation of simplified, highly…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…
We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological…
Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their…