相关论文: Gate control, g-factors and spin orbit energy of p…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
We propose a new orbital controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single particle scattering formalism in conjunction with a posteriori density functional approach…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…
We demonstrate direct measurements of the spin-orbit interaction and Land\'e g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
Nanowire double quantum dots occupied by an even number of electrons are investigated in the context of energy level structure revealed by electric dipole spin resonance measurements. We use numerically exact configuration interaction…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…