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Low-energy coherent transport and Goos-H\"{a}nchen (GH) lateral shift of valley electrons in planar heterojunctions composed of normal MoS$_2$ and ferromagnetic WS$_2$ monolayers are theoretically investigated. Two types of heterojunctions…

介观与纳米尺度物理 · 物理学 2018-03-13 Hassan Ghadiri , Alireza Saffarzadeh

The combination of magnetism and topological properties in one material platform is attracting significant attention due to the potential of realizing low power consumption and error-robust electronic devices. Common practice is to start…

Van der Waals heterostructures have become a rapidly growing field in condensed matter research, offering a platform to engineer novel quantum systems by stacking different two-dimensional (2D) materials. A diverse range of material…

介观与纳米尺度物理 · 物理学 2025-10-01 Bharti Matta , Philipp Rosenzweig , Craig Polley , Ulrich Starke , Kathrin Küster

Developing intrinsic homojunctions without chemical heterogeneity remains a key challenge in future two - dimensional devices. Here, we report a geometry - defined metal--semiconductor--metal homojunction in bilayer blue phosphorus (BlueP)…

介观与纳米尺度物理 · 物理学 2026-02-27 Zewen Wu , Min Zhou , Yanxia Xing , Xianghua Kong

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

介观与纳米尺度物理 · 物理学 2024-12-31 Giuseppe Lovarelli , Fabrizio Mazziotti , Demetrio Logoteta , Giuseppe Iannaccone

Molecular-scale manipulation of electronic/ionic charge accumulation in materials is a preeminent challenge, particularly in electrochemical energy storage. Layered van der Waals (vdW) crystals exemplify a diverse family of materials that…

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface…

Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulphide (MoS2), has…

材料科学 · 物理学 2016-03-03 Wei Hu , Jinlong Yang

Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact…

材料科学 · 物理学 2020-09-29 Lin Ju , Mei Bie , Xiwei Zhang , Xiangming Chen , Liangzhi Kou

Device-based tunnel spectroscopy of superconductors was first performed by Giaever, whose seminal work provided clear evidence for the spectral gap in the density of states (DOS) predicted by the Bardeen-Cooper-Schrieffer (BCS) theory.…

Spaceplates have emerged in the context of nonlocal metasurfaces, enabling the compression of optical systems by minimizing the required empty space between their components. In this work, we design and analyze spaceplates that support…

Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these…

The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…

Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface electronic band structures depending on the stacking order and exposed termination.…

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron…

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

Van der Waals (vdW) semiconductors have emerged as promising platforms for efficient nonlinear optical conversion, including harmonic and entangled photon generation. Although major efforts are devoted to integrating vdW materials in…

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging.…

Bismuth oxyselenide (Bi$_2$O$_2$Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi$_2$O$_2$Se…

材料科学 · 物理学 2024-08-07 Ke Zhang , Yusen Feng , Lei Hao , Jing Mi , Miao Du , Minghui Xu , Yan Zhao , Jianping Meng , Liang Qiao