相关论文: Cryogenic GaAs high-electron-mobility-transistor a…

Atomic-resolution cryogenic scanning transmission electron microscopy (cryo-STEM) has provided a path to probing the microscopic nature of select low-temperature phases in quantum materials. Expanding cryo-STEM techniques to broadly tunable…

The MUSCAT instrument is a large-format camera planned for installation on the Large Millimeter Telescope (LMT) in 2018. MUSCAT requires continuous cooling of several large-volume stages to sub-Kelvin temperatures, with the focal plane…

Phonon mean free path is generally inferred from the measurement of thermal conductivity and we are still lacking precise information on this quantity. Recent advances in the field of high frequency phonons transduction using semiconductor…

Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the…

Microrefrigerators based on normal metal-insulator-superconductor (NIS) junctions represent a very attractive alternative to cool the microbolometers and calorimeters for astrophysical observations in space-borne experiments. The…

Room temperature operation is mandatory for any optoelectronics technology which aims to provide low-cost compact systems for widespread applications. In recent years, an important technological effort in this direction has been made in…

We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible…

This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and…

This paper presents a novel approach utilizing a scalable neural decoder application-specific integrated circuit (ASIC) based on metal oxide memristors in a 180nm CMOS technology. The ASIC architecture employs in-memory computing with…

In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…

We present a concept of a mirror for the application in high-reflectivity low-noise instruments such as interferometers. The concept is based on an etalon with a metasurface (meta-etalon) on the front and a conventional multilayer stack on…

This work presents an original experimental device conceived to characterise the viscoelastic properties of wood. Classically, the dynamic mechanical analysis of wood is performed using a commercial apparatus like a DMA (Dynamic Mechanical…

The CRESST experiment aims at the direct detection of sub-GeV dark matter particles via elastic scattering off nuclei in different target crystals at cryogenic temperatures. The advancement in W-TES sensors allowed the CRESST detectors to…

In the described device, the thermal emissivity or absorptivity of the sample is measured by substitution of the radiative heat flow between two parallel surfaces by thermal output of a heater. Fast measurements of the mutual emissivity for…

The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…

The quest to enhance the sensitivity of electron spin resonance (ESR) is an ongoing challenge. One potential strategy involves increasing the frequency, for instance, moving from Q-band (approximately 35 GHz) to W-band (approximately 94…

A new and simple analytical charge-control model of the two-dimensional electron gas of a double-heterojunction AlGaAs/GaAs/AlGaAs HEMT is described. It is found that, despite its simplicity, the charge-control model gives an accurate…

Common-mode choke inductors are useful tools for resolving grounding issues in large detector systems. Using inductive components on cryogenic pre-amplifier boards has so far been prevented by the poor low-temperature performance of common…

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from…

We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…