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The basic units in our brain are neurons and each neuron has more than 1000 synapse connections. Synapse is the basic structure for information transfer in an ever-changing manner, and short-term plasticity allows synapses to perform…

材料科学 · 物理学 2014-03-05 Li Qiang Zhu , Chang Jin Wan , Li Qiang Guo , Yi Shi , Qing Wan

We report a detailed study of neuromorphic switching behaviour in inherently complex percolating networks of self-assembled metal nanoparticles. We show that variation of the strength and duration of the electric field applied to this…

无序系统与神经网络 · 物理学 2019-03-06 S. K. Bose , S. Shirai , J. B. Mallinson , S. A. Brown

Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their…

材料科学 · 物理学 2018-08-01 Tobias Gergs , Sven Dirkmann , Thomas Mussenbrock

A structure of germanium selenide glasses is simulated by the featured clusters built from the tetrahedral GeSe4 units up to the clusters with six germanium atoms (Ge6Se16H4 and Ge6Se16H8). Quantum chemical calculations at the DFT level…

材料科学 · 物理学 2017-08-23 V. Gurin , O. Shpotyuk , V. Boyko

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…

Neuromorphic computing aspires to overcome the intrinsic inefficiencies of von Neumann architectures by co-locating memory and computation in physical devices that emulate biological neurons and synapses. Memristive materials stand at the…

介观与纳米尺度物理 · 物理学 2026-03-06 Salvador Cardona-Serra

There has been considerable interest in chalcogenide alloys with high concentrations of native vacancies that lead to properties desirable for thermoelectric and phase-change materials. Recently, vacancy ordering has been identified as the…

Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were…

材料科学 · 物理学 2020-04-07 Jiating Lu , Xi Zhang , Limeng Shen , Ya Nie , Gang Xiang

Helium and rare gases (RG: Ne, Ar, Kr, Xe) are typically considered chemically inert, yet under the extreme pressures of planetary interiors they may form compounds with unexpected properties. Using crystal structure prediction and…

材料科学 · 物理学 2025-10-31 Cong Liu , Jordi Boronat , Claudio Cazorla

Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si…

Short range order and topology of Ge$_x$S$_{100-x}$ glasses over a broad composition range (20 $\le$ x $\le$ 42 in at%) was investigated by neutron diffraction, X-ray diffraction, and Ge K-edge extended X-ray absorption fine structure…

Superconducting iron chalcogenide FeSe has the simplest crystal structure among all the Fe-based superconductors. Unlike other iron pnictides, FeSe exhibits no long range magnetic order accompanying the tetragonal-to-orthorhombic structural…

Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…

Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. They are widely used in current digital electronics and hold great…

材料科学 · 物理学 2015-04-28 Celia Reina , Luis Sandoval , Jaime Marian

The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with…

介观与纳米尺度物理 · 物理学 2026-01-26 Leonard Deuschle , Jiang Cao , Alexandros Nikolaos Ziogas , Anders Winka , Alexander Maeder , Nicolas Vetsch , Mathieu Luisier

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such…

无序系统与神经网络 · 物理学 2009-10-31 Normand Mousseau , G. T. Barkema

The structure and energetics of Ge substitutional defects on the alpha-Sn/Ge(111) surface are analyzed using Density Functional Theory (DFT) molecular dynamics (MD) simulations. An isolated Ge defect induces a very local distortion of the…

材料科学 · 物理学 2009-11-07 Jose Ortega , Ruben Perez , Leszek Jurczyszyn , Fernando Flores

A theoretical treatment of deeply supercooled liquids is difficult because their properties emerge from spatial inhomogeneities that are self-induced, transient, and nanoscopic. I use computer simulations to analyse self-induced static and…

统计力学 · 物理学 2021-08-24 Ludovic Berthier

Chalcogenide materials are an important class of phase change material (PCMs) owing to their employment in digital memory solutions. Chalgogenide materials have applications in phase change random access memory (PCRAM) due to their ability…

材料科学 · 物理学 2025-10-15 Owain T. Beynon , Adham Hashibon

We employed a machine-learning assisted approach to search for superconducting hydrides under ambient pressure within an extensive dataset comprising over 150 000 compounds. Our investigation yielded around 50 systems with transition…

超导电性 · 物理学 2024-03-21 Tiago F. T. Cerqueira , Yue-Wen Fang , Ion Errea , Antonio Sanna , Miguel A. L. Marques