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Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

介观与纳米尺度物理 · 物理学 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

介观与纳米尺度物理 · 物理学 2022-01-25 Donovan Buterakos , Sankar Das Sarma

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…

介观与纳米尺度物理 · 物理学 2026-03-26 Bilal Tariq , Xuedong Hu

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…

介观与纳米尺度物理 · 物理学 2016-11-15 Guido Burkard , J. R. Petta

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…

介观与纳米尺度物理 · 物理学 2015-03-13 Mark Friesen , S. N. Coppersmith

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…

介观与纳米尺度物理 · 物理学 2023-03-27 Xinxin Cai , Elliot J. Connors , John M. Nichol

The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…

介观与纳米尺度物理 · 物理学 2026-04-06 Heun Mo Yoo , Tanner M. Janda , Connor Nasseraddin , Jason R. Petta

In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…

介观与纳米尺度物理 · 物理学 2022-06-29 Xinyu Zhao , Xuedong Hu

Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…

介观与纳米尺度物理 · 物理学 2018-09-05 J. Salfi , B. Voisin , A. Tankasala , J. Bocquel , M. Usman , M. Y. Simmons , L. C. L. Hollenberg , R. Rahman , S. Rogge

Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In…

介观与纳米尺度物理 · 物理学 2009-11-10 Yoko Hada , Mikio Eto

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

介观与纳米尺度物理 · 物理学 2019-08-02 Xinyu Zhao , Xuedong Hu

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…

介观与纳米尺度物理 · 物理学 2014-08-05 Xiaojie Hao , Rusko Ruskov , Ming Xiao , Charles Tahan , HongWen Jiang

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

介观与纳米尺度物理 · 物理学 2013-07-01 C. H. Yang , A. Rossi , R. Ruskov , N. S. Lai , F. A. Mohiyaddin , S. Lee , C. Tahan , G. Klimeck , A. Morello , A. S. Dzurak

We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…

介观与纳米尺度物理 · 物理学 2016-05-04 T. Kobayashi , J. van der Heijden , M. G. House , S. J. Hile , Pablo Asshoff , M. F. Gonzalez-Zalba , M. Vinet , M. Y. Simmons , S. Rogge

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…

Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…

介观与纳米尺度物理 · 物理学 2016-09-15 J. Salfi , J. A. Mol , R. Rahman , G. Klimeck , M. Y. Simmons , L. C. L. Hollenberg , S. Rogge
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