相关论文: On-demand quantum spin Hall insulators controlled …

We propose a scheme to realize time-reversal symmetry-broken quantum spin Hall insulators using bilayer honeycomb lattices, combining intrinsic spin-orbit coupling, C-type antiferromagnetic ordering, and staggered potentials. The C-type…

Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…

We predict topological electron crystals driven by the interplay of interlayer Coulomb attraction and topological miniband physics in bilayer graphene--Mott insulator heterostructures. Charge transfer creates a charge neutral, mass…

We study the band structure of phases induced by depositing bilayer graphene on a transition metal dichalcogenide monolayer. Tight-binding and low-energy effective Hamiltonian calculations show that it is possible to induce topologically…

Topological Insulator (TI) has recently emerged as an attractive candidate for possible application to spintronic circuits because of its strong spin orbit coupling. TIs are unique materials that have an insulating bulk but conducting…

Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…

We investigate the effect of spin-orbit coupling on the band structure of graphene-based two-dimensional Dirac fermion gases in the quantum Hall regime. Taking monolayer graphene as our first candidate, we show that a quantum phase…

Usually the quantum spin Hall states are expected to possess gapless, helical edge modes. Are there clean, non-interacting, quantum spin Hall states without gapless, edge modes? We show the generic, $n$-fold-symmetric, momentum planes of…

Moir\'e materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moir\'e-scale structure modulation. Here, we propose twisted bilayer…

Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential…

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

Moir\'e structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network…

The rich phase diagram of quantum spin-ladder systems has attracted much attention in the theoretical literature. The progress in experimental realisations of this fascinating physics however has been much slower. While materials with a…

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Topological band insulators which are dynamically generated by electron-electron interactions have been the- oretically proposed in two and three dimensional lattice models. We present evidence that the two-dimensional version can be…

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…

Certain insulating materials with strong spin-orbit coupling can conduct currents along their edges or surfaces. This phenomenon arises from the non-trivial topological properties of the electronic band-structure, and is somewhat similar to…

Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…

To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…

We consider the zero-filled quantum-Hall ferromagnetic state of bilayer graphene subject to a kink-like perpendicular electric field, which generates domain walls in the electronic state and low-energy collective modes confined to move…