相关论文: Magnetization switching induced by spin-orbit torq…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…
The manipulation of magnetization via Magnetic torques is one of the most important phenomena in spintronics. In thin films, conventionally, a charge current flowing in a heavy metal is used to generate transverse spin currents and to exert…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…
Electrical manipulation of magnetization by spin-orbit torque (SOT) has shown promise for realizing reliable magnetic memories and oscillators. To date, the generation of transverse spin current and SOT, whether it is of spin Hall effect…
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $\chi_{SHE}$, can be estimated for Pt…
Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…