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相关论文: Architecture of nanoscale ferroelectric domains in…

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Ferroelectrics form domain patterns that minimize their energy subject to imposed boundary conditions. In a linear, constrained theory, that neglects domain wall energy, periodic domain patterns in the form of multi-rank laminates can be…

材料科学 · 物理学 2018-03-20 Ananya Renuka Balakrishna , John E. Huber , Ingo Münch

Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…

材料科学 · 物理学 2021-03-30 Mingqiang Li , Xiaomei Li , Yuehui Li , Heng-Jui Liu , Ying-Hao Chu , Peng Gao

Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…

材料科学 · 物理学 2024-10-29 Elzbieta Gradauskaite , Chia-Jung Yang , Shovon Pal , Manfred Fiebig , Morgan Trassin

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…

无序系统与神经网络 · 物理学 2013-11-07 T. Tybell , P. Paruch , T. Giamarchi , J. -M. Triscone

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…

强关联电子 · 物理学 2009-11-10 M. S. Rzchowski , Robert Joynt

The Jahn-Teller effect refers to the symmetry-lowering geometrical distortion in a crystal (or non-linear molecule) due to the presence of a degenerate electronic state. Usually, the Jahn-Teller distortion is not polar. Recently, GaV4S8…

材料科学 · 物理学 2015-10-28 Ke Xu , H. J. Xiang

This paper analyzes a peculiar phenomenon of non-reciprocal domain wall pairs and illustrate the implications in ab-initio-based atomistic computational experiments with (112)-oriented planar R180 domain walls within the canonical…

材料科学 · 物理学 2025-01-10 M. A. P. Goncalves , M. Graf , M. Pasciak , J. Hlinka

We present the results of broadband dielectric spectroscopy of GaMo$_4$S$_8$, a lacunar spinel system that recently was shown to exhibit non-canonical, orbitally-driven ferroelectricity. Our study reveals complex relaxation dynamics of this…

强关联电子 · 物理学 2018-12-26 K. Geirhos , S. Krohns , H. Nakamura , T. Waki , Y. Tabata , I. Kézsmárki , P. Lunkenheimer

We investigate the strain dependence of the ferroelectric polarization and the structure of the ferroelectric domain walls in the layered perovskite-related barium fluorides, BaMF$_4$ (M=Mg, Zn). The unusual "geometric ferroelectricity" in…

材料科学 · 物理学 2016-02-24 Maribel Núñez Valdez , Hendrik Th. Spanke , Nicola A. Spaldin

Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…

The equilibrium sizes of micro- and nano-domains caused by electric field of atomic force microscope tip in ferroelectric semiconductor crystals have been calculated. The domain was considered as a prolate semi-ellipsoid with rather thin…

材料科学 · 物理学 2009-11-11 Anna N. Morozovska , Eugene A. Eliseev

We report on observation of ferroelastic domain structure in single crystals of multiferroic CaMn$_7$O$_{12}$ at room temperature. Two types of ferroelastic domain wall are found, consistent with the material's rhombohedral symmetry that is…

强关联电子 · 物理学 2015-02-05 Renliang Yuan , Lian Duan , Xinyu Du , Yuan Li

Ferroelectric domain structures, separated by domain walls, often display unconventional physics and hold significant potential for applications in nano-devices. Most naturally growth domain walls are charge-neutral to avoid increased…

材料科学 · 物理学 2024-12-17 Yunfei Hong , Junkai Deng , Yang Yang , Ri He , Zhicheng Zhong , Xiangdong Ding , Jun Sun , Jefferson Zhe Liu

Ferroelectric domains in PbTiO$_3$/SrTiO$_3$ superlattices were studied using synchrotron X-ray diffraction. Macroscopic measurements revealed a change in the domain wall orientation from $\left\lbrace 100 \right\rbrace $ to $\left\lbrace…

介观与纳米尺度物理 · 物理学 2018-02-13 Marios Hadjimichael , Edoardo Zatterin , Stéphanie Fernandez-Peña , Steven J. Leake , Pavlo Zubko

Domain structures play a crucial role in the electric, mechanical and other properties of ferroelectric materials. In this study, we uncover the physical origins of the enigmatic zigzag domain structure in the prototypical multiferroic…

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for…

Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been…

Structural features of ferroic domains are fundamentally important for the understanding of microstructure and physical properties of ferroic materials, and they are also of technological significance for information storage and electronic…

材料科学 · 物理学 2012-05-22 J. Q. Li , J. Li , H. X. Yang , H. F. Tian , S-W. Cheong , C. Ma , S. Zhang , Y. G. Zhao

LuFe2O4 is a multiferroic system which exhibits ferroelectricity, charge order, and ferrimagnetic order simultaneously below ~230 K. The ferroelectric domains of LuFe2O4 are imaged with both piezoresponse force microscopy (PFM) and…

强关联电子 · 物理学 2015-06-22 I. K. Yang , J. Kim , S. H. Lee , S. B. Kim , S. W. Cheong , Y. H. Jeong