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We explore mechanisms of orbital order decay in doped Mott insulators $R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=\,$Pr,Y,La) caused by charged (Sr,Ca) defects. Our unrestricted Hartree-Fock analysis focuses on the combined effect of random, charged…

强关联电子 · 物理学 2019-04-03 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

We present a model for typical charged defects in weakly doped Y1-xCaxVO3 perovskites and study how they influence the magnetic and orbital order. Starting from a multiband Hubbard model, we show that the charge carriers introduced by…

强关联电子 · 物理学 2013-01-18 Peter Horsch , Andrzej M. Oles

We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Peter Horsch , Andrzej M. Oleś

We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase…

强关联电子 · 物理学 2009-11-11 J. Fujioka , S. Miyasaka , Y. Tokura

We compare the effective spin-orbital super\-exchange triggered by magnetic $3d$ impurities with $d^3$ and $d^2$ configurations and either no orbital degree of freedom (orbital dilution) or hole replacing a doublon (charge dilution) in a…

强关联电子 · 物理学 2017-01-17 Wojciech Brzezicki , Mario Cuoco , Andrzej M. Oleś

We demonstrate that magnetic $3d$ impurities with $S=3/2$ spins and no orbital degree of freedom induce changes of spin-orbital order in a $4d^4$ Mott insulator with $S=1$ spins. Impurities act either as spin defects which decouple from the…

强关联电子 · 物理学 2016-03-02 Wojciech Brzezicki , Mario Cuoco , Andrzej M. Oleś

A short introduction to the complex phenomena encountered in transition metal oxides with either charge or orbital or joint charge-and-orbital order, usually accompanied by magnetic order, is presented. It is argued that all the types of…

强关联电子 · 物理学 2022-01-27 Andrzej M. Oles

We investigate the interplay between Coulomb driven orbital order and octahedral distortions in strongly correlated Mott insulators due to orbital dilution, i.e., doping by metal ions without an orbital degree of freedom. In particular, we…

强关联电子 · 物理学 2020-07-30 Wojciech Brzezicki , Filomena Forte , Canio Noce , Mario Cuoco , Andrzej M. Oleś

Roles of Coulomb interaction, orbital degeneracy and Jahn-Teller coupling in double-exchange models are examined for Mn perovskite oxides. We study the undoped Mott insulator as well as metal-insulator transitions by hole doping, and…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

We elucidate the effects of defect disorder and $e$-$e$ interaction on the spectral density of the defect states emerging in the Mott-Hubbard gap of doped transition-metal oxides, such as Y$_{1-x}$Ca$_{x}$VO$_{3}$. A soft gap of kinetic…

强关联电子 · 物理学 2015-11-12 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

We study the $3d$ substitution in $4d$ transition metal oxides in the cases of $3d^3$ doping at either $3d^2$ or $4d^4$ sites which realize orbital dilution. We derive the effective $3d-4d$ (or $3d-3d$) superexchange in a Mott insulator…

强关联电子 · 物理学 2015-03-31 Wojciech Brzezicki , Andrzej M. Oleś , Mario Cuoco

Taking the orbital degeneracy of $e_g$ conduction bands and the Coulomb interaction into account in a double-exchange model, we investigate charge dynamics of perovskite Mn oxides by the Lancz$\ddot{\rm o}$s diagonalization method. In the…

强关联电子 · 物理学 2009-10-31 Hiroki Nakano , Yukitoshi Motome , Masatoshi Imada

Hole dynamics in spin and orbital ordered vanadates with perovskite structure is investigated. A mobile hole coupled to the spin excitation (magnon) in the spin G-type and orbital C-type (SG/OC) ordered phase, and that to the orbital…

强关联电子 · 物理学 2009-11-10 Sumio Ishihara

Motivated by recent experiments on vanadium spinels, $A$V$_2$O$_4$, that show an increasing degree of electronic delocalization for smaller cation sizes, we study the evolution of orbital ordering (OO) between the strong and…

强关联电子 · 物理学 2012-08-13 Yasuyuki Kato , Gia-Wei Chern , K. A. Al-Hassanieh , Natalia B. Perkins , C. D. Batista

We investigate the doping dependence of the nanoscale electronic and magnetic inhomogeneities in the hole-doping range 0.002<x<0.1 of cobalt based perovskites, La{1-x}Sr_xCoO_3. Using single crystal inelastic neutron scattering and…

A model of CuO$_2$ planes of cuprate perovskites, containing $d_{x^2-y^2}$ copper orbitals and symmetric combinations of oxygen $p_\sigma$ orbitals, is investigated using the strong coupling diagram technique. This approach allows one to…

强关联电子 · 物理学 2020-09-01 Alexei Sherman

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

Doping ferroelectrics with carriers is often detrimental to polarization. This makes the design and discovery of metals that undergo a ferroelectric-like transition challenging. In this letter, we show from first principles that the oxygen…

材料科学 · 物理学 2021-08-23 Shutong Li , Turan Birol

The doping variation of charge and orbital dynamics in perovskite-type Y1-xCaxVO3 (0<x<0.1) is investigated by measurements of the optical conductivity and Raman scattering spectra in comparison with the larger-bandwidth system La1-xSrxVO3.…

强关联电子 · 物理学 2009-11-13 J. Fujioka , S. Miyasaka , Y. Tokura
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