相关论文: Double Free-Layer Magnetic Tunnel Junctions for Pr…

Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by…

Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…

Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…

Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…

Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on…

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…

Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses.…

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…

Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is…

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…

We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…