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相关论文: The Breakdown of Mott Physics at VO$_2$ Surfaces

200 篇论文

The metal-insulator transition (MIT) is a fundamental phenomenon in condensed matter physics and a hallmark of strong electronic correlations. Hydrogen-based systems offer a simple yet powerful model for investigating the MIT, as their…

强关联电子 · 物理学 2025-05-26 Juan Felipe Huan Lew-Yee , Mario Piris

The insulator-to-metal transition (IMT) in strongly correlated materials, such as vanadium dioxide (VO2), offers a transformative platform for next-generation adaptive electronics and neuromorphic computing. However, harnessing this…

Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in…

Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure…

介观与纳米尺度物理 · 物理学 2012-09-05 Jiang Wei , Zenghui Wang , Wei Chen , David H. Cobden

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…

强关联电子 · 物理学 2024-06-12 P. Homm , M. Menghini , J. W. Seo , S. Peters , J. -P. Locquet

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…

强关联电子 · 物理学 2015-06-24 Yong-Sik Lim , Hyun-Tak Kim , B. G. Chae , D. H. Youn , K. O. Kim , K. Y. Kang , S. J. Lee , K. Kim

We present a density-functional theory (DFT) study of the structural, electronic, and chemical bonding behaviour in germanium (Ge)-doped vanadium dioxide (VO$_2$). Our motivation is to explain the reported increase of the metal-insulator…

材料科学 · 物理学 2023-02-03 Peter Mlkvik , Claude Ederer , Nicola A. Spaldin

To compare the metal-insulator transitions (MITs) of VO2 and V2O3 we analyze the relations between the structural and electronic properties of the vanadium Magneli phases. These materials set up the homologous series VnO(2n-1) (3 <= n <= 9)…

强关联电子 · 物理学 2009-11-10 Udo Schwingenschloegl , Volker Eyert

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001)…

强关联电子 · 物理学 2015-07-15 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic…

强关联电子 · 物理学 2009-11-11 M. M. Qazilbash , K. S. Burch , D. Whisler , D. Shrekenhamer , B. G. Chae , H. T. Kim , D. N. Basov

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the…

Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…

强关联电子 · 物理学 2020-08-26 Yasuhiro H. Matsuda , Daisuke Nakamura , Akihiko Ikeda , Shojiro Takeyama , Yuji Muraoka , Yuki Suga

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant…

材料科学 · 物理学 2025-01-07 Feng-Wu Guo , Wen-Hao Liu , Zhi Wang , Shu-Shen Li , Lin-Wang Wang , Jun-Wei Luo

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…

强关联电子 · 物理学 2022-07-04 Yuting Tan , Vladimir Dobrosavljevic , Louk Rademaker

Nonequilibrium phase transitions driven by light pulses represent a rapidly developing field in condensed matter physics. As one of the archetypal strongly correlated materials, vanadium dioxide (VO2) undergoes a structural phase transition…

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…

强关联电子 · 物理学 2021-01-18 Chang-Yong Kim , Tetiana Slusar , Jinchul Cho , Hyun-Tak Kim

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

材料科学 · 物理学 2021-10-13 Kun Han , Hanyu Wang , Liang Wu , Yu Cao , Dong-Chen Qi , Changjian Li , Zhen Huang , Xiao Li , X. Renshaw Wang

Vanadium dioxide (VO$_2$) is central in the study of ultrafast photoinduced insulator-to-metal phase transitions in strongly correlated materials, and a primary candidate for next-generation light-driven devices. However, the physical…

强关联电子 · 物理学 2025-09-23 S. Mandal , P. Kumar , H. Y. Kim , Z. Pi , J. Xu , D. Chen , D. Kazenwadel , P. Baum , S. Meng , E. Goulielmakis