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Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the…

Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor…

材料科学 · 物理学 2022-03-23 Jin Quan Ng , Qingyun Wu , L. K. Ang , Yee Sin Ang

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer…

Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal,…

Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a…

材料科学 · 物理学 2022-10-19 Changmeng Huan , Pu Wang , Bingtao Liu , Binghan He , Yongqing Cai , Qingqing Ke

Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and metal-induced gap states (MIGS). Although MIGS can be…

材料科学 · 物理学 2024-11-06 Che Chen Tho , Yee Sin Ang

Recent discovery of ultrathick $\mathrm{MoSi_2N_4(MoN)_n}$ monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we computationally investigate a series of ultrathick…

材料科学 · 物理学 2023-11-16 Che Chen Tho , Xukun Feng , Zhuoling Jiang , Liemao Cao , Chit Siong Lau , San-Dong Guo , Yee Sin Ang

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical…

材料科学 · 物理学 2022-02-16 Chen Shen , Lei Wang , Donghai Wei , Yixuan Zhang , Guangzhao Qin , Xing-Qiu Chen , Hongbin Zhang

Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulphide (MoS2), has…

材料科学 · 物理学 2016-03-03 Wei Hu , Jinlong Yang

Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer…

材料科学 · 物理学 2023-01-24 M. R. Ebrahimi , T. Vazifehshenas

We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various…

介观与纳米尺度物理 · 物理学 2014-03-14 N. Lu , H. Y. Guo , L. Wang , X. J. Wu , X. C. Zeng

Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find…

材料科学 · 物理学 2022-03-29 Ghulam Hussain , Mazia Asghar , Muhammad Waqas Iqbal , Hamid Ullah , Carmine Autieri

Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

High contact resistances have blocked the progress of devices based on MX2 (M = Mo,W; X = S,Se,Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type…

介观与纳米尺度物理 · 物理学 2016-02-09 M. Farmanbar , G. Brocks

The electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations, which may pose significant challenges to their applications in electronic or optoelectronic devices. A 2D material couples with…

材料科学 · 物理学 2022-06-17 Yabei Wu , Zhao Tang , Weiyi Xia , Weiwei Gao , Fanhao Jia , Yubo Zhang , Wenguang Zhu , Wenqing Zhang , Peihong Zhang

Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS$_2$ with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS$_2$,…

材料科学 · 物理学 2023-04-19 Tong Su , Yueyan Li , Qianqian Wang , Weiwei Zhao , Liemao Cao , Yee Sin Ang

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs)…

材料科学 · 物理学 2023-06-27 Yinjiang Shao , Jian Zhou , Ning Xu , Jian Chen , Kenji Watanabe , Takashi Taniguchi , Yi Shi , Songlin Li

Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct…

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi…

介观与纳米尺度物理 · 物理学 2020-05-14 Liemao Cao , Guanghui Zhou , Qingyun Wu , Shengyuan A. Yang , Hui Ying Yang , Yee Sin Ang , L. K. Ang
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