中文
相关论文

相关论文: Memristive control of mutual SHNO synchronization …

200 篇论文

Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual…

应用物理 · 物理学 2024-02-02 Maha Khademi , Akash Kumar , Mona Rajabali , Saroj P. Dash , Johan Åkerman

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…

无序系统与神经网络 · 物理学 2018-04-19 Taimur Ahmed , Sumeet Walia , Edwin Mayes , Rajesh Ramanathan , Vipul Bansal , Madhu Bhaskaran , Sharath Sriram , Omid Kavehei

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

其他凝聚态物理 · 物理学 2013-07-04 Siddharth Gaba , Patrick Sheridan , Jiantao Zhou , Shinhyun Choi , Wei Lu

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…

Memristors have been widely studied as artificial synapses in neuromorphic circuits, due to their functional similarity with biological synapses, low operating power, and high integration density. In this work, a memristive synapse,…

新兴技术 · 计算机科学 2023-08-29 Y. Liu , D. Wang , Z. Dong , H. Xie , W. Zhao

Mutual synchronization of N serially connected spintronic nano-oscillators increases their coherence by a factor $N$ and their output power by $N^2$. Increasing the number of mutually synchronized nano-oscillators in chains is hence of…

Memristive devices hold promise to improve the scale and efficiency of machine learning and neuromorphic hardware, thanks to their compact size, low power consumption, and the ability to perform matrix multiplications in constant time.…

新兴技术 · 计算机科学 2024-08-14 Zhenming Yu , Ming-Jay Yang , Jan Finkbeiner , Sebastian Siegel , John Paul Strachan , Emre Neftci

We propose an asymmetric-nanoconstriction (ANC) design of spin-Hall nano-oscillators (SHNOs) and investigate mutual synchronization of a pair of such devices using micromagnetic simulations. The ANC geometry enables strong dipolar coupling…

介观与纳米尺度物理 · 物理学 2025-09-16 Roman V. Ovcharov , Roman S. Khymyn , Akash Kumar , Johan Åkerman

We demonstrate low-operational-current W/Co$_{20}$Fe$_{60}$B$_{20}$/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the $\beta$-phase W ($\theta_{SH}$ =…

应用物理 · 物理学 2018-04-18 M. Zahedinejad , H. Mazraati , H. Fulara , J. Yue , S. Jiang , A. A. Awad , J. Åkerman

Memristive neural networks (MNNs), which use memristors as neurons or synapses, have become a hot research topic recently. However, most memristors are not compatible with mainstream integrated circuit technology and their stabilities in…

新兴技术 · 计算机科学 2019-01-03 Zhiri Tang , Ruohua Zhu , Peng Lin , Jin He , Hao Wang , Qijun Huang , Sheng Chang , Qiming Ma

Spin-Hall nano-oscillators (SHNOs) are promising spintronic devices to realize current controlled GHz frequency signals in nanoscale devices for neuromorphic computing and creating Ising systems. However, traditional SHNOs -- devices based…

介观与纳米尺度物理 · 物理学 2023-03-21 Haowen Ren , Xin Yu Zheng , Sanyum Channa , Guanzhong Wu , Daisy A. O'Mahoney , Yuri Suzuki , Andrew D. Kent

We demonstrate a novel type of spin Hall nano-oscillator (SHNO) that allows for efficient tuning of magnetic auto-oscillations over an extended range of gigahertz frequencies, using bipolar direct currents at constant magnetic fields. This…

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via…

介观与纳米尺度物理 · 物理学 2024-04-08 Sourabh Manna , Rohit Medwal , John Rex Mohan , Yasuhiro Fukuma , Rajdeep Singh Rawat

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

介观与纳米尺度物理 · 物理学 2015-04-08 V. K. Sangwan , D. Jariwala , I. S. Kim , K. -S. Chen , T. J. Marks , L. J. Lauhon , M. C. Hersam

Multi-core neuromorphic systems typically use on-chip routers to transmit spikes among cores. These routers require significant memory resources and consume a large part of the overall system's energy budget. A promising alternative…

新兴技术 · 计算机科学 2023-12-22 Junren Chen , Siyao Yang , Huaqiang Wu , Giacomo Indiveri , Melika Payvand

Spin Hall nano-oscillators (SHNOs) utilize pure spin currents to drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and…

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative…

介观与纳米尺度物理 · 物理学 2023-01-11 Akash Kumar , Mona Rajabali , Victor Hugo González , Mohammad Zahedinejad , Afshin Houshang , Johan Åkerman
‹ 上一页 1 2 3 10 下一页 ›