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Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…

介观与纳米尺度物理 · 物理学 2017-02-01 Sagar Bhandari , Robert M. Westervelt

We review a calculation of the quantum corrections to electrical transport in graphene using the trajectory-based semiclassical method. Compared to conventional metals, for graphene the semiclassical propagator contains an additional…

介观与纳米尺度物理 · 物理学 2014-07-22 Martin Schneider , Piet W. Brouwer

In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as source and probe. A large fraction of this information never reaches…

介观与纳米尺度物理 · 物理学 2015-03-17 F. S. M. Guimarães , A. T. Costa , R. B. Muniz , M. S. Ferreira

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…

介观与纳米尺度物理 · 物理学 2008-08-27 Pierre Darancet , Valerio Olevano , Didier Mayou

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

介观与纳米尺度物理 · 物理学 2011-08-12 Jairo Velasco , Gang Liu , Wenzhong Bao , Chun Ning Lau

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

介观与纳米尺度物理 · 物理学 2008-10-02 Xu Du , Ivan Skachko , Anthony Barker , Eva Y. Andrei

Understanding and predicting interface diffusion phenomena in materials is crucial for various industrial applications, including semiconductor manufacturing, battery technology, and catalysis. In this study, we propose a novel approach…

材料科学 · 物理学 2025-01-13 Zirui Zhao , Hai-Feng Li

Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface…

介观与纳米尺度物理 · 物理学 2017-02-03 Pedro Brandimarte , Mads Engelund , Nick Papior , Aran Garcia-Lekue , Thomas Frederiksen , Daniel Sánchez-Portal

The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…

介观与纳米尺度物理 · 物理学 2015-05-28 Redwan Sajjad , Avik Ghosh

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

Graphene on noble-metal nanostructures constitutes an attractive nanocomposite with possible applications in sensors or energy conversion. In this work we study the properties of hybrid graphene/gold nanoparticle structures by Raman…

介观与纳米尺度物理 · 物理学 2018-06-14 András Pálinkás , Péter Kun , Antal A. Koós , Zoltán Osváth

Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel…

应用物理 · 物理学 2023-08-14 P. Kaźmierczak , J. Binder , K. Boryczko , T. Ciuk , W. Strupiński , R. Stępniewski , A. Wysmołek

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors…

介观与纳米尺度物理 · 物理学 2015-06-19 Dhiraj Sinha , Ji Ung Lee

Graphene nano-ribbons junctions based electronic devices are proposed in this Letter. Non-equilibrium Green function calculations show that nano-ribbon junctions tailored from single layer graphene with different edge shape and width can…

介观与纳米尺度物理 · 物理学 2007-06-13 Zhiping Xu

We present perturbation theory for analysis of generic third-order nonlinear processes in graphene integrated photonic structures. Optical response of graphene is treated as the nonlinear boundary condition in Maxwell equations. The derived…

光学 · 物理学 2016-07-13 Andrey V. Gorbach , Edouard Ivanov

The next-nearest neighbor interaction (NNN) is included in a tight-binding calculation of the electronic spectrum and conductivity of doped graphene. As a result, we observe a wide variation of the conductivity behavior, since the Fermi…

材料科学 · 物理学 2015-10-12 J. E. Barrios-Vargas , Gerardo G Naumis

We demonstrate that surface plasmon resonances excited by photon tunneling through an adjacent dielectric medium enhance photocurrent detected by a graphene photodetector. The device is created by overlaying a graphene sheet over an etched…

We show that the wavefunctions form caustics in circular graphene p-n junctions which in the framework of geometrical optics can be interpreted with negative refractive index.

介观与纳米尺度物理 · 物理学 2007-12-12 Jozsef Cserti , Andras Palyi , Csaba Peterfalvi

The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows…

介观与纳米尺度物理 · 物理学 2015-11-13 Thomas Stegmann , Axel Lorke

Graph Neural Networks (GNNs) often struggle in preserving high-frequency components of nodal signals when dealing with directed graphs. Such components are crucial for modeling flow dynamics, without which a traditional GNN tends to treat a…

机器学习 · 计算机科学 2025-06-09 Haoyang Jiang , Jindong Wang , Xingquan Zhu , Yi He