相关论文: Tunable valley splitting and bipolar operation in …
Trilayer graphene in the fractional Quantum Hall Effect regime displays a set of unique interaction-induced transitions that can be tuned entirely by the applied bias voltage. These transitions occur near the anti-crossing points of two…
Bilayer graphene exhibits a rich phase diagram in the quantum Hall regime, arising from a multitude of internal degrees of freedom, including spin, valley, and orbital indices. The variety of fractional quantum Hall states between filling…
We present a study on the lifting of degeneracy of the size-quantized energy levels in an electrostatically defined quantum point contact in bilayer graphene by the application of in-plane magnetic fields. We observe a Zeeman spin splitting…
We consider electronic transport through laterally parallel double open quantum dots embedded in a quantum wire in a perpendicular magnetic field. The coupling modes of the dots are tunable by adjusting the strength of a central barrier and…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
Bilayer graphene is normally a semimetal with parabolic dispersion, but a tunable bandgap up to few hundreds meV can be opened by breaking the symmetry between the layers through an external potential. Ab-initio calculations show that the…
High-fidelity detection of charge transitions in quantum dots (QDs) is a key ingredient in solid state quantum computation. We demonstrate high-bandwidth radio-frequency charge detection in bilayer graphene quantum dots (QDs) using a…
Bilayer graphene is a maturing material platform for gate-defined quantum dots that hosts long-lived spin and valley states. Implementing solid-state qubits in bilayer graphene requires a fundamental understanding of such confined…
We theoretically investigate gate-defined graphene superlattices with broken inversion symmetry as a platform for realizing tunable valley dependent transport. Our analysis is motivated by recent experiments [C. Forsythe et al., Nat.…
We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
Despite much theoretical work, developing a comprehensive ab initio model for twisted bilayer graphene (TBG) has proven challenging due to the inherent trade-off between accurately describing the band structure and incorporating the…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers,…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum…
For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the…
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…
We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic field regime where the Hall conductance in the p-doped and n-doped regions is 2e^2/h. In the absence of intervalley scattering, the result…
Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field (TEF), certain boron and nitrogen…