中文
相关论文

相关论文: MoSi2N4 single-layer: a novel two-dimensional mate…

200 篇论文

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…

材料科学 · 物理学 2023-09-21 Muhammad Sufyan Ramzan , Tomasz Woźniak , Agnieszka Kuc , Caterina Cocchi

Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find…

材料科学 · 物理学 2022-03-29 Ghulam Hussain , Mazia Asghar , Muhammad Waqas Iqbal , Hamid Ullah , Carmine Autieri

Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive…

First-principles density functional theory (DFT) is employed to evaluate the structural, electronic, optical, thermoelectric, and electrocatalytic properties of monolayer CrSi2N4. Its symmetric N-Si-N-Cr-N-Si-N septuple-layer structure…

材料科学 · 物理学 2026-05-15 Rao Uzair Ahmad , Fahd Sikandar Khan , Nasir Javed

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material…

材料科学 · 物理学 2021-02-03 Liemao Cao , Guanghui Zhou , Qianqian Wang , L. K. Ang , Yee Sin Ang

Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were…

介观与纳米尺度物理 · 物理学 2021-11-29 Jun-Sheng Huang , Ping Li , Xiao-Xiong Ren , Zhi-Xin Guo

The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and very popular transition metal di-chalcogenides (TMDC), which…

材料科学 · 物理学 2024-05-16 Chayan Das , Abhishek , Dibyajyoti Saikia , Appala Naidu Gandi , Satyajit Sahu

Experimental realization of single-layer MoSi2N4 is among the latest groundbreaking advances in the field of two-dimensional (2D) materials. Inspired by this accomplishment, herein we conduct first-principles calculations to explore the…

Group IV and V monolayers are the promising state-of-the-art 2D materials owing to their high carrier mobility, tunable bandgaps, and optical linear dichroism along with outstanding electronic and thermoelectric properties. Furthermore,…

计算物理 · 物理学 2021-07-07 X. Q. Shu , J. H. Lin , H. Zhang

Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition metal nitride (Mo-N) inner sub-monolayer sandwiched by two…

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential…

材料科学 · 物理学 2020-01-08 San-Dong Guo , Xiao-Shu Guo

Recently, two-dimensional monolayer MoSi2N4 with hexagonal structure was successfully synthesized in experiment (Hong et al 2020 Science 369, 670). The fabricated monolayer MoSi2N4 is predicted to have excellent mechanical properties.…

介观与纳米尺度物理 · 物理学 2021-04-14 Qingfang Li , Wanxin Zhou , Xiangang Wan , Jian Zhou

Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor…

材料科学 · 物理学 2022-03-23 Jin Quan Ng , Qingyun Wu , L. K. Ang , Yee Sin Ang

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical…

材料科学 · 物理学 2022-02-16 Chen Shen , Lei Wang , Donghai Wei , Yixuan Zhang , Guangzhao Qin , Xing-Qiu Chen , Hongbin Zhang

The discovery of two-dimensional (2D) layered MoSi$_2$N$_4$ and WSi$_2$N$_4$ without knowing their 3D parents by chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA$_2$Z$_4$ system due to its structural complexity…

材料科学 · 物理学 2022-11-04 Yan Yin , Qihua Gong , Min Yi , Wanlin Guo

The recently discovered two-dimensional (2D) layered semiconductor MoSi2N4 has aroused great interest due to its unique 2D material characteristics. In this Letter, we found that differences in the structural details for MoSi2N4 may lead to…

介观与纳米尺度物理 · 物理学 2021-05-12 Lei Kang , Zheshuai Lin

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Very recently, a novel two-dimension (2D) MXene, MoSi$_2$N$_4$, was successfully synthesized with excellent ambient stability, high carrier mobility, and moderate band gap (Science 369, 670, 2020). In this work, the intrinsic lattice…

材料科学 · 物理学 2021-03-25 Jihai Yu , Jian Zhou , Xiangang Wan , Qingfang Li

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new…

材料科学 · 物理学 2021-01-27 Chen Yang , Zhigang Song , Xiaotian Sun , Jing Lu

Low-symmetry Penta-PdPSe with intrinsic in-plane anisotropy synthesized successfully [(P. Li et al., Adv. Mater., 2102541, (2021)]. Motivated by this experimental discovery, we investigate the structural, mechanical, electronic, optical and…

‹ 上一页 1 2 3 10 下一页 ›