相关论文: Depth-Dependent EBIC Microscopy of Radial-Junction…
Surface erosion and secondary electron emission (SEE) have been identified as the most critical life-limiting factors in channel walls of Hall-effect thrusters for space propulsion. Recent wall concepts based on micro-architected surfaces…
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high…
EPECUR experimental setup is aimed at the search of narrow resonant states by precision measurement of differential and total reaction cross sections of pion-nucleon interaction with 1 MeV pion energy steps. In five years passed from the…
In present work, we theoretically study the electron wave's focusing phenomenon in a single layered graphene pn junction(PNJ) and obtain the electric current density distribution of graphene PNJ, which is in good agreement with the…
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we…
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links…
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…
The dual-radiator Imaging Cherenkov detector (dRICH) is a key component of the forward particle identification system for the ePIC experiment at the Electron-Ion Collider (EIC). This study evaluates the dRICH performance using Geant4…
The Circular Electron-Positron Collider (CEPC), a next-generation high-luminosity collider, employs a crab waist scheme to achieve ultrahigh $5 \times 10^{34} \, \text{cm}^{-2}\text{s}^{-1}$ luminosity at Higgs mode. Owing to the extremely…
Photonic Integrated Circuits (PICs) are essential for high-speed and compact optoelectronic applications, yet efficient optical coupling to PIC remains a critical challenge, where minimizing insertion losses is crucial for high-performance…
Improving the efficiency of edge detection in embedded applications, such as UAV control, is critical for reducing system cost and power dissipation. Field programmable gate arrays (FPGA) are a good platform for making improvements because…
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores…
Particle ratios are important observables used to constrain models of particle production in heavy-ion collisions. In this work we report on a measurement of the p/pi ratio in the transverse momentum range 2.0 < p_{T,assoc} < 4.0 GeV/c,…
LaB$_3$:Ce crystals have been introduced for radiation imaging in medical physics, with photomultiplier or single SiPM readout. An R-D was pursued with 1/2" and 1" LaBr3:Ce crystals, from different producers, to realize compact large area…
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…
Vertically stacked heterojunctions have garnered significant attention for their tunable electronic structures and photocatalytic performance, making them promising candidates for next-generation nanodevices. Using first-principles…
I present here a new ring-ring design of eRHIC, a polarized electron-ion collider based on RHIC at BNL. This alternate eRHIC design utilizes high repetition rate colliding beams and is likely able to deliver the performance to meet the…
Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open…