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The structural phase transition in Ta$_2$NiSe$_5$ has been envisioned as driven by the formation of an excitonic insulating phase. However, the role of structural and electronic instabilities on crystal symmetry breaking has yet to be…

The formation of excitonic insulator phases in quantum materials is often masked by structural distortions caused by the coupling between electronic and phononic order parameters. Here we show that the candidate material Ta$_2$NiSe$_5$ is…

Coulomb attraction between electrons and holes in a narrow-gap semiconductor or a semimetal is predicted to lead to an elusive phase of matter dubbed 'excitonic insulator'. However, direct observation of such electronic instability remains…

The excitonic insulator is an electronically-driven phase of matter that emerges upon the spontaneous formation and Bose condensation of excitons. Detecting this exotic order in candidate materials is a subject of paramount importance, as…

Excitonic insulator is a coherent electronic phase that results from the formation of a macroscopic population of bound particle-hole pairs - excitons. With only a few candidate materials known, the collective excitonic behavior is…

Ta$_2$NiSe$_5$ is one of the most promising materials for hosting an excitonic insulator ground state. While a number of experimental observations have been interpreted in this way, the precise nature of the symmetry breaking occurring in…

The spontaneous condensation of excitons in the excitonic insulating phase has been reported in Ta$_2$NiSe$_5$ below 325 K. In this context, we present the temperature-dependent optical pump optical probe spectroscopy of Ta$_2$NiSe$_5$,…

Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. Ta$_2$NiSe$_5$ has been widely regarded as a leading candidate, yet the nature of…

The origin of the second order phase transition at 328K in Ta$_2$NiSe$_5$, a prominent candidate for direct gap excitonic insulator, remains under fervent debate. The driving force for the transition can be revealed by identification of the…

Recently, we employed electronic polarization-resolved Raman spectroscopy to reveal the strongly correlated excitonic insulator (EI) nature of Ta2NiSe5, Volkov et al. [arXiv:2007.07344], and also showed that for…

Femtosecond time-resolved mid-infrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta$_2$NiSe$_5$ below the critical temperature of its structural phase…

On cooling through a temperature $T_S$ of around 324 K, Ta$_2$NiSe$_5$ undergoes a transition from a semimetallic state to one with a gapped electronic spectrum which is suspected to be an excitonic insulator. However, at this transition…

We performed ultrasonic measurements on (Ta$_{0.952}$V$_{0.048}$)$_2$NiSe$_5$ to investigate the contribution of acoustic phonons at the zone center to structural and possible excitonic transitions. The transverse elastic constant $C_{55}$…

The influence of phonons on the formation of the excitonic insulator has hardly been analyzed so far. Recent experiments on $\rm Ta_2NiSe_5$, 1$T$-$\rm TiSe_2$, and $\rm TmSe_{0.45}Te_{0.55}$, being candidates for realizing the…

Ta2NiSe5 is considered a promising excitonic insulator (EI) candidate with slight phonon contributions, since it exhibits a tiny orthorhombic-to-monoclinic structural distortion at 328 K without any superlattice structure. Our synchrotron…

Electron-hole bound pairs, or excitons, are common excitations in semiconductors. They can spontaneously form and ``condense'' into a new insulating ground state -- the so-called excitonic insulator -- when the energy of electron-hole…

We show that the coupling to vibrational degrees of freedom can drive a semimetal excitonic-insulator quantum phase transition in an one-dimensional two-band f-c electron system at zero temperature. The insulating state typifies an…

Ta$_2$NiSe$_5$ is an excitonic insulator candidate showing the semiconductor/semimetal-to-insulator (SI) transition below $T_{\text{c}}$ = 326 K. However, since a structural transition accompanies the SI transition, deciphering the role of…

We study the electronic phase diagram of the excitonic insulator candidates Ta$_2$Ni(Se$_{1-x}$S$_x$)$_5$ [x=0, ... ,1] using Raman spectroscopy. Critical excitonic fluctuations are observed, that diminish with $x$ and ultimately shift to…

The layered compound $\mathrm{Ta_2NiSe_5}$ is a quasi-one-dimensional and narrow-gap semiconductor, which is proposed to undergo a transition to an excitonic insulator at $T_\mathrm{c}=326$ K. We found a clear anomaly at $T_\mathrm{c}$ in…