相关论文: Quantification of interfacial spin-charge conversi…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
We consider a heterostructure consisting of a normal metal and a superconductor separated by a spin-active interface. At finite-bias voltages, spin-filtering and spin-mixing effects at the interface allow for an induced magnetization (spin…
We study the interplay of both Rashba and Dresselhaus spin-orbit couplings (SOCs) and a uniform perpendicular magnetic field $\textbf{B}$ on the transport of a spin-polarized electron along a curved quantum wire. Eigenenergies and…
In this chapter we review the quantitative and qualitative aspects of describing the properties of magnetic solids on the basis of electronic Hamiltonian. We show that a spin Hamiltonian approach becomes consistent with an electronic…
The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices…
This article describes a mean-field theoretical model for Spin-Crossover (SCO) materials and explores its implications. It is based on a simple Hamiltonian that yields the high spin molar fraction as a function of temperature and pressure,…
We propose an approach based on a generalized quantum mechanics to deal with the basic features of the intrinsic spin Hall effect. This can be done by considering two decoupled harmonic oscillators on the noncommutative plane and evaluating…
We propose a scheme where transport measurements of charge current and its noise can be used to determine the spin Hall conductance in a four-terminal setup. Starting from the scattering formalism we express the spin current and spin Hall…
Spintronics is the generic term that describes magnetic systems coupled to an electric generator, taking into account the spin attached to the charge carriers. For this topical review of {\it Spin Caloritronics}, we focus our attention on…
Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a…
We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \%…
To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the "charge-pumping" formalism, we find two contributions to the…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
The influence of acceleration and rotation on spintronic applications is theoretically investigated. In our formulation, considering a Dirac particle in a non-inertial frame, different spin related aspects are studied. The spin current…
Despite a clear demonstration of bistability in spin-crossover (SCO) materials, the absence of long-range magnetic order and poor electrical conductivity limit their prospect in spintronic and nanoelectronic applications. Intending to…
We show that pure spin injection from a magnetic electrode into an inversion symmetry-broken system composed of a tunnel barrier and a metallic region generates a transverse charge current. Such a tunnelling spin galvanic conversion is…
Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO$_2$ as an…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge…
We present a methodology to address, from first principles, charge-spin interconversion in two-dimensional materials with spin-orbit coupling. Our study relies on an implementation of density functional theory based quantum transport…