相关论文: Interfacial crystal Hall effect reversible by ferr…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…
A unified theory of the anomalous Hall effect (AHE) is presented for multi-band ferromagnetic metallic systems with dilute impurities. In the clean limit, the AHE is mostly due to the extrinsic skew-scattering. When the Fermi level is…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…
The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting…
The magnetoelectric (ME) effects are caused by interactions of the electrical and magnetic subsystems in a solid. Among the applications of ME effects, there are methods of magnetic reversal under the influence of an electrostatic field and…
We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror…
The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for…
Density functional theory calculations have been performed for the structural, electronic, magnetic and ferroelectric properties of a mixed-valence Fe(II)-Fe(III) formate framework [NH$_2$(CH$_3$)$_2$][Fe$^{\rm III}$Fe$^{\rm II}$(HCOO)$_6$]…
Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…
The dc voltage obtained from the inverse spin Hall effect (iSHE) due to spin pumping in ferromagnet/normal-metal (NM) bilayers can be unintentionally superimposed with magnetoresistive rectification of ac charge currents in the…
Spin-transfer torque and spin Hall effects combined with their reciprocal phenomena, spin-pumping and inverse spin Hall (ISHE) effects, enable the reading and control of magnetic moments in spintronics. The direct observation of these…
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the…
By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and…
Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, discovered more than a century ago, has been understood in terms of the…
We propose to realize the quantum anomalous Hall effect (QAHE) in two-dimensional compensated antiferromagnets without net spin magnetization.} We consider antiferromagnetic MnBi$_2$Te$_4$ as a concrete example. \textcolor{blue}{By breaking…
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…
Spin Hall effect (SHE) in two-dimensional (2D) materials is promising to effectively manipulate spin angular momentum and identify topological properties. In this work, we implemented an automated Wannierization with spin-orbit coupling on…
The planar Hall effect (PHE), wherein a rotating magnetic field in the plane of a sample induces oscillating transverse voltage, has recently garnered attention in a wide range of topological metals and insulators. The observed twofold…