相关论文: Dimensional crossover in spin Hall oscillators
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an…
We study a nonlinear spin dynamics of a ferromagnetic ring in a vortex state induced by the spin-polarized current. We also suggest to use the ferromagnetic ring as a free layer of a coreless vortex spin-transfer nano-oscillator. The…
We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by…
We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire,…
Chiral superconductors spontaneously break time-reversal symmetry and host topologically protected edge modes, supposedly generating chiral edge currents which are typically taken as a characteristic fingerprint of chiral superconductivity.…
We study the depinning transition of driven interfaces in thin ferromagnetic films driven by external magnetic fields. Approaching the transition point the correlation length increases with decreasing driving. If the correlation length…
Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It…
We have carried out fully relativistic full-potential, spin-polarized, all-electron density-functional calculations for straight, monatomic nanowires of the 5d transition and noble metals Os, Ir, Pt and Au. We find that, of these metal…
The anomalous Hall effect (AHE) in magnetic nanofilms is highly sensitive to the microstructural and magnetic homogeneity. However, the evolution of the microstructure and morphology near the percolation threshold, and its connection to the…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
We report a stable magnetic domain wall in a uniform ferromagnetic spin-1 condensate, characterized by the magnetization having a dark soliton profile with nonvanishing superfluid density. We find exact stationary solutions for a particular…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
In this work we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to…
We describe direct electrical measurements of microwave-frequency dynamics in individual nanomagnets that are driven by spin transfer from a DC spin-polarized current. We map out the dynamical stability diagram as a function of current and…
The dynamics of current-induced motion of a magnetic domain wall in a quasi-one-dimensional ferromagnet with both easy-axis and easy-plane anisotropy, is studied. We pay a special attention to the case of a sharp domain wall, and calculate…
We derive boundary conditions for the electrically induced spin accumulation in a finite, disordered 2D semiconductor channel. While for DC electric fields these boundary conditions select spatially constant spin profiles equivalent to a…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…