相关论文: BAlN for III-nitride UV light emitting diodes: und…
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance…
Maintaining the highest quality and output of photon science in the VUV-, EUV-, soft- and tender-X-ray energy ranges requires high-quality blazed profile gratings. Currently, their availability is critical due to technological challenges…
Using first-principles density functional theory calculations, we investigate the geometries, electronic structures, and thermodynamic stabilities of substitutionally doped phosphorene sheets with group III, IV, V, and VI elements. We find…
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit…
Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by…
In addition to its relevant astrophysical and cosmological significance, the Extragalactic Background Light (EBL) is a fundamental source of opacity for cosmic high energy photons, as well as a limitation for the propagation of high-energy…
Eu modified Na1/2Bi1/2TiO3 (NBT) was investigated for electric-field induced Eu+3 photoluminescence (PL) and structural changes. Detailed analysis revealed that below a critical Eu composition electric field irreversibly suppresses the…
For two-dimensional superconductors, the high stability in ambient conditions is critical for experiments and applications. Few-layer antimonene can be non-degradative over a couple of months, which is superior to the akin black phosphorus.…
We investigated chemical pressure effects in electron-doped (e-doped) FeSe by fabricating an electric-double-layer structure with single crystalline FeSe films on LaAlO$_3$ with Se substituted by isovalent Te and S. Our method enables…
Simultaneous measurements of transient transmission and reflectivity were performed in the unintentionally doped InN film to reveal ultrafast optical bleaching and its recovery behavior under intense laser irradiation. The optical bleaching…
In this work, layered perovskite SBN was investigated in a new doped form for hole as well as electron transport layer (HTL/ETL) in perovskite solar cells. This work was targeted to conclude the effect of tin doping in lanthanum-bismuth…
Electrodynamic balances (EDBs) have been widely used to investigate reactions between levitated particles and background gases. In this paper, we report the development of an EDB that exposes trapped particles to alkali-metal vapor. The…
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…
The Extragalactic Background Light (EBL) as an integrated light from outside of our Galaxy includes information of the early universe and the Dark Ages. We analyzed the spectral data of the astrophysical diffuse emission obtained with the…
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide…
In this study, we present a comprehensive quantitative analysis of the radiation emitted by 855 MeV electrons propagating through an oriented diamond hetero-crystal. The crystal consists of two distinct segments: (i) a straight…
The radiative recombination of injected charge carriers gives rise to electroluminescence (EL), a central process for light-emitting diode (LED) operation. It is often presumed in some emerging fields of optoelectronics, including…
Our goal is to research the upper limits on the extragalactic background light (EBL). The upper limits on the extragalactic background light (EBL), using the Fermi and very high energy (VHE) spectra recently observed in TeV blazars, are…