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Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental…

介观与纳米尺度物理 · 物理学 2025-01-07 I. Di Bernardo , J. Hellerstedt , C. Liu , G. Akhgar , W. Wu , S. A. Yang , D. Culcer , S. -K. Mo , S. Adam , M. T. Edmonds , M. S. Fuhrer

Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been…

Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding…

We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin…

材料科学 · 物理学 2020-08-26 I. Di Bernardo , J. Collins , W. Wu , J. Zhou , S. A. Yang , S. Ju , M. T. Edmonds , M. S. Fuhrer

Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator…

材料科学 · 物理学 2019-08-15 Huinan Xia , Yang Li , Min Cai , Le Qin , Nianlong Zou , Lang Peng , Wenhui Duan , Yong Xu , Wenhao Zhang , Ying-Shuang Fu

Bulk Dirac semimetals (DSMs) exhibit unconventional transport properties and phase transitions due to their peculiar low-energy band structure. Yet the electronic interactions governing nonequilibrium phenomena in DSMs are not fully…

材料科学 · 物理学 2023-05-24 Dhruv C. Desai , Jinsoo Park , Jin-Jian Zhou , Marco Bernardi

Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS$_2$ with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS$_2$,…

材料科学 · 物理学 2023-04-19 Tong Su , Yueyan Li , Qianqian Wang , Weiwei Zhao , Liemao Cao , Yee Sin Ang

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional…

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…

介观与纳米尺度物理 · 物理学 2025-02-06 Gaëlle Bigeard , Zineb Kerrami , François Triozon , Alessandro Cresti

The material termed three-dimensional (3D) Dirac semimetal has attracted great interests recently, since it is an electronic analogue to two-dimensional graphene. Starting from this novel phase, various topologically distinct phases may be…

强关联电子 · 物理学 2014-12-17 L. P. He , X. C. Hong , J. K. Dong , J. Pan , Z. Zhang , J. Zhang , S. Y. Li

Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na$_3$Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure.…

By means of first-principles and \emph{ab initio} tight-binding calculations, we found that the compound of NaBi is a three-dimensional non-trivial topological metal. Its topological feature can be confirmed by the presence of band…

材料科学 · 物理学 2014-08-05 Xing-Qiu Chen , Ronghan Li , Yan Sun , Xiyue Cheng , Dianzhong Li , Yiyi Li

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material…

材料科学 · 物理学 2021-02-03 Liemao Cao , Guanghui Zhou , Qianqian Wang , L. K. Ang , Yee Sin Ang

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited…

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase…

材料科学 · 物理学 2017-01-20 Hua-Ding Song , Dian Sheng , An-Qi Wang , Jin-Guang Li , Da-Peng Yu , Zhi-Min Liao

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…

Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological…

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were…

材料科学 · 物理学 2015-08-28 Zhi-Gang Chen , Cheng Zhang , Yichao Zou , Enze Zhang , Lei Yang , Faxian Xiu , Jin Zou

First principles calculations reveal that adding a metallic overlayer on LaAlO3/SrTiO3(001) eliminates the electric field within the polar LaAlO3 film and thus suppresses the thickness-dependent insulator-to-metal transition observed in…

材料科学 · 物理学 2012-03-23 V. G. Ruiz López , R. Arras , W. E. Pickett , R. Pentcheva

A pair of Dirac points (analogous to a vortex-antivortex pair) associated with opposite topological numbers (with $\pm\pi$ Berry phases) can be merged together through parameter tuning and annihilated to gap the Dirac spectrum, offering a…

介观与纳米尺度物理 · 物理学 2019-11-20 Yang Xu , Guodong Jiang , Ireneusz Miotkowski , Rudro R. Biswas , Yong P. Chen
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