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相关论文: Exploring physics of ferroelectric domain walls vi…

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Mechanically compatible and electrically neutral domain walls in tetragonal, orthorhombic and rhombohedral ferroelectric phases of BaTiO3 are systematically investigated in the framework of the phenomenological Ginzburg-Landau-Devonshire…

材料科学 · 物理学 2012-12-03 P. Marton , I. Rychetsky , J. Hlinka

Analytical description of domain structure morphology and phase diagrams of ferroelectric nanoparticles is developed in the framework of Landau Ginzburg Devonshire approach. To model realistic conditions of incomplete screening of…

Ferroelectric domains were investigated using piezoresponse force microscopy in superlattices composed of multiferroic BiFeO3 and SrTiO3 layers. Compared to single BiFeO3 thin films, a reduction in the domains size and a suppression of the…

This paper analyzes a peculiar phenomenon of non-reciprocal domain wall pairs and illustrate the implications in ab-initio-based atomistic computational experiments with (112)-oriented planar R180 domain walls within the canonical…

材料科学 · 物理学 2025-01-10 M. A. P. Goncalves , M. Graf , M. Pasciak , J. Hlinka

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly…

Recently, a layered ferroelectric CuInP2Se6 was shown to exhibit domain walls with locally enhanced piezoresponse - a striking departure from the observations of nominally zero piezoresponse in most ferroelectrics. Although it was proposed…

Previous experiments with BaTiO$_3$ single crystals have shown that application of the electric field in the vicinity of the ferroelectric phase transition can be used to introduce peculiar persisting ferroelectric domain walls, accompanied…

材料科学 · 物理学 2024-10-31 P. S. Bednyakov , J. Hlinka

The control of ferroelectric domain walls and their dynamics on the nanoscale becomes increasingly important for advanced nanoelectronics and novel computing schemes. One common approach to tackle this challenge is the pinning of walls by…

Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…

无序系统与神经网络 · 物理学 2014-02-18 B. Ziegler , K. Martens , T. Giamarchi , P. Paruch

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

材料科学 · 物理学 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been…

Enhanced conductivity at ferroelectric domain walls in BiFeO$_3$ has been widely observed, yet the microscopic origins of this effect, including electronic contributions from domain-wall defects, are incompletely understood at the atomistic…

材料科学 · 物理学 2025-07-17 Guo-Dong Zhao , Ismaila Dabo , Long-Qing Chen

The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic…

应用物理 · 物理学 2019-09-18 M. J. Han , E. A. Eliseev , A. N. Morozovska , Y. L. Zhu , Y. L. Tang , Y. J. Wang , X. W. Guo , X. L. Ma

Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…

Ferroelectric polarization switching underpins the functional performance of a wide range of materials and devices, yet its dependence on complex local microstructural features renders systematic exploration by manual or grid-based…

Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…

材料科学 · 物理学 2020-02-19 Maya Barzilay , Yachin Ivry

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…

We study the complex ferroelastic/ferroelectric domain structure in the prototypical ferroelectric PbTiO3 epitaxially strained on (110)o-oriented DyScO3 substrates, using a combination of atomic force microscopy, laboratory and synchrotron…

Recent interests towards novel functionalities arising at domain walls of ferroic materials naturally call for a microscopic understanding. To this end, first-principles calculations have been performed in order to provide solid evidence of…

材料科学 · 物理学 2014-04-09 Paolo Barone , Domenico Di Sante , Silvia Picozzi

Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…

材料科学 · 物理学 2017-03-15 Shi Liu , R. E. Cohen