相关论文: Radiation hardness and post irradiation regenerati…

The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…

The investigation of the degradation effects on triple-junction (TJ) solar cells, operating in space environment, is of primary importance in view of future space missions towards harsh radiation orbits (e.g. MEO with high particle…

Solar cells have been used since several decades for the detection of fission fragments at about 1 AMeV. The advantages of solar cells regarding their cost (few euros) and radiation damage resistance make them an interesting candidate for…

Space-grade Si and GaAs solar cells were irradiated with 15 & 40 MeV Li ions. Illuminated (AM0 condition) and unilluminated I-V curves reveal that the effect of high-energy Li ion irradiation has produced similar effects to that of proton…

Space solar cell radiation hardness is of fundamental importance in view of the future missions towards harsh radiation environment (like the Jupiter missions) and for the new spacecraft using Electrical Propulsion. In this paper we report…

We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…

Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three…

The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy,…

Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice…

In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematicallyimproves solar cell efficiency in the case of devices using intrinsic and…

Space solar cells radiation hardness is of fundamental importance in view of the future missions towards harsh radiation environment (like e.g. missions to Jupiter) and for the new spacecraft using electrical propulsion. In this paper we…

Solar cells manufactured on top of Ge substrates suffer from inherent drawbacks that hinder or limit their potential. The most deleterious ones are heavy weight, high bulk recombination, lack of photon confinement and an increase of the…

Space-grade Si and GaAs solar cells were irradiated with 15 and 40 MeV lithium ions. Dark-IV analysis (with and without illumination) reveals differences in the effects of such irradiation on the different cell types

We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a…

The phosphide-based III-V semiconductors InP, GaP, and In$_{0.5}$Ga$_{0.5}$P are promising materials for solar panels in outer space and radioisotope batteries, for which lifetime is a major issue. In order to understand high radiation…

A temperature accelerated life test on Upright Metamorphic Ga0.37In0.63P/Ga0.83In0.17As/Ge triple-junction solar cells has been carried out. The acceleration has been accomplished by subjecting the solar cells to temperatures (125, 145 and…

Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…

This study investigates the effects of space environmental radiation on the performance of InGaAs Quadrant Photodiodes (QPDs) and assesses their suitability for the Laser Interferometer Space Antenna (LISA) mission. QPDs of 1.0, 1.5 and 2.0…

Defects in the lattice are of primal importance to tune graphene chemical, thermal and electronic properties. Electron-beam irradiation is an easy method to induce defects in graphene following pre-designed patterns, but no systematic study…