相关论文: Supersaturation model for InN PA-MOCVD
A high-yield production of high-quality boron-nitride nanotubes (BNNTs) was reported recently in several publications. A boron-rich material is evaporated by a laser or plasma in a nitrogen-rich atmosphere to supply precursor gaseous…
In this letter we report on the synthesis of monolayers of MoS$_2$ via chemical vapor deposition directly on thin films of Al$_2$O$_3$ grown by spatial atomic layer deposition. The synthesized monolayers are characterized by atomic force…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…
Vanadium dioxide, a well-known Mott insulator, is a highly studied electronic material with promising applications in information processing and storage. While fully crystalline layers exhibit exceptional properties, such as a sharp and…
We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold…
We study the expansion of a strongly coupled, non-neutral, and cylindrically arranged ion plasma into the vacuum. The plasma is made from cold rubidium atoms in a magneto-optical trap (MOT) and is formed via ultraviolet photoionization.…
We utilize experimental tools such as conductive atomic force microscopy and electrostatic force microscopy on photo-excited arrays of gold nanoparticles on indium tin oxide substrate. The nanoparticles are partially covered by a thin…
We derive the stochastic model of plasma-condensate systems by taking into account anisotropy in transference of adatoms between neighbor layers and by introducing fluctuations of adsorbate flux. We show, that by varying the fluctuation's…
Accurate determination of total oxidant concentration [Ox]tot in nonthermal plasma treated aqueous systems remains a critical challenge due to the transient nature of reactive oxygen and nitrogen species and the subjectivity of conventional…
Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create…
Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) is one of the leading candidates for the development of non-volatile memory and neuro-inspired computing technologies. Recent work shows Indium to be an important…
We present a numerical study of Gamma-Ray Burst - Circumburst Medium interaction and plasma preconditioning via Compton scattering. The simulation tool employed is a unique hybrid model; it combines a highly parallelized (Vlasov)…
This study demonstrates the efficacy of ML-based trend inference using data from the Large Plasma Device (LAPD). The LAPD is a flexible basic plasma science device with a high discharge repetition rate (0.25-1 Hz) and reproducible plasmas…
Formation of large volume fractions of Mn-Ni-Si precipitates (MNSPs) causes excess irradiation embrittlement of reactor pressure vessel (RPV) steels at high, extended-life fluences. Thus, a new and unique, semi-empirical cluster dynamics…
We propose atomic films of n-doped $\gamma$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the…
Thin-film transistors composed of a hydrogen-containing indium oxide active layer are promising candidates for backplane devices in next-generation flat panel displays, offering higher definition and faster operation. However, the hydrogen…
We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that…
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses…
Plasmonic nanomaterials offer a direct and effective approach to harnessing solar energy. Specifically, plasmonic semiconductors enable a highly efficient light-to-heat conversion process, outperforming noble metals in stability,…
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction…