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HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has…
The emergence of altermagnets establishes a new paradigm for multiferroics. Unlike conventional multiferroics relying on direct magnetoelectric coupling, multiferroic altermagnets host a crystal-symmetry-mediated magnetoelectric interaction…
Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the…
The mechanical behavior of two-dimensional (2D) materials across 2D phase changes is unknown, and the finite temperature ($T$) elasticity of paradigmatic SnSe monolayers -- ferroelectric 2D materials turning paraelectric as their unit cell…
MoTe2 is a rare transition-metal ditelluride having two kinds of layered polytypes, hexagonal structure with trigonal prismatic Mo coordination and monoclinic structure with octahedral Mo coordination. The monoclinic distortion in the…
Strong coupling among spontaneous structural symmetric breaking, magnetism and metallicity in an intrinsic polar magnetic metal can give rise to novel physical phenomena and holds great promise for applications in spintronics. Here, we…
The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible…
A wide variety of applications has inspired great interest in designing new materials and investigating fundamental physics in the ferroelectric field. In the concept of ferroelectricity, the spontaneous polarization is traditionally…
Sliding ferroelectricity is emerging as a distinct and promising mechanism for realizing ferroelectricity in low-dimensional systems, offering new design principles beyond the conventional ferroelectric mechanism. Further, the coexistence…
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…
We explore the interplay between ferroelectricity and metallicity, which are generally considered to be contra-indicated properties, in the prototypical ferroelectric barium titanate, BaTiO$_3$. Using first-principles density functional…
In order to study the metallic ferromagnetism induced by electron doping in the narrow-gab semiconductor FeSb$_2$, single crystals of FeSb$_2$, Fe$_{1-x}$Co$_x$Sb$_2$ ($0 \le x \le 0.5$) and FeSb$_{2-y}$Te$_y$ ($0 \le y \le 0.4$), were…
The discovery of unconventional ferroelectric behavior in twisted bilayers has prompted the consideration of moir\'e heterostructures as polar materials. However, misconceptions about the nature and origin of the observed ferroelectricity…
In ferroelectrics, complex interactions among various degrees of freedom enable the condensation of topologically protected polarization textures. Known as ferroelectric solitons, these particle-like structures represent a new class of…
The recent observation of a ferroelectric-like structural transition in metallic LiOsO$_3$ has generated a flurry of interest in the properties of polar metals. Such materials are thought to be rare because free electrons screen out the…
Ferroelectric (FE) metals have been attracting attention as they possess both metallicity and ferroelectricity, the two seemingly incompatible physical properties. An important problem for both fundamental research and potential…
Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic materials was focused on three-dimensional (3D) materials. However,…
We demonstrate the integration of a thin BaTiO$_3$ (BTO) membrane with monolayer MoSe$_2$ in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D)…
In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g. ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but…
Polar topological structures in ferroelectric thin films have recently drawn significant interest due to their fascinating physical behaviors and promising applications in high-density nonvolatile memories. However, most polar topological…