相关论文: Gully quantum Hall ferromagnetism in biased trilay…
Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric…
Recently a new high-mobility Dirac material, trilayer graphene, was realized experimentally. The band structure of ABA-stacked trilayer graphene consists of a monolayer-like and a bilayer-like pairs of bands. Here we study electronic…
We report on quantum capacitance measurements of high quality, graphite- and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and…
In this Letter, we present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and…
The co-presence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function…
We study the electronic structures of ABA (Bernal) stacked multilayer graphenes in uniform perpendicular electric field, and show that the interplay of the trigonal warping and the potential asymmetry gives rise to a number of emergent…
Superlattices (SLs) in monolayer and bilayer graphene, formed by spatially periodic potential variations, lead to a modified bandstructure with extra finite-energy and zero-energy Dirac fermions with tunable anisotropic velocities. We…
We report on the fractional quantum Hall states of germanene and silicene where one expects a strong spin-orbit interaction. This interaction causes an enhancement of the electron-electron interaction strength in one of the Landau levels…
The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four…
The generalized tight-binding model, based on the subenvelope functions of distinct sublattices, is developed to investigate the magnetic quantization in sliding bilayer graphenes. The relative shift of two graphene layers induces a…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
The effective theory for bilayer graphene (BLG), subject to parallel/in-plane magnetic fields, is derived. With a sizable magnetic field the trigonal warping becomes irrelevant, and one ends up with two Dirac points in the vicinity of each…
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device…
We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…
Displacement field control of elecronic bands in low-dimensional systems is a promising route toward engineering emergent quantum phases. Here, we report displacement-field-induced band inversion and modulation of the Berry phase of…
Trilayer graphene in the fractional Quantum Hall Effect regime displays a set of unique interaction-induced transitions that can be tuned entirely by the applied bias voltage. These transitions occur near the anti-crossing points of two…
Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a…
We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum…
We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from…
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene…