相关论文: Fast response deep-ultraviolet photodetector based…
The escalating demand for ultraviolet (UV) sensing in space exploration, environmental monitoring, and agricultural productivity necessitates detectors that are both environmentally and mechanically resilient. Diamond, featuring its high…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors. We prepare a wearable real-time UV photodetector based on hydrogenated titanium dioxide film…
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface…
We present a simple autocorrelator for ultraviolet pulses based on two-photon conductivity in a bench-top fabricatable sapphire sensor. We perform measurements on femtosecond 226 - 278 nm ultraviolet pulses from the third and fourth…
We investigate the potential of epitaxial (001)p-NiO/(0001)n-ZnO heterostructures grown on (0001)sapphire substrates by pulsed laser deposition technique for ultraviolet photodetector application. Our study reveals that in the self-powered…
We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long coherence length, and $200$ fs rms time resolution. We…
The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using…
Ultrafast electron diffraction (UED) instruments typically operate at kHz or lower repetition rates and rely on indirect detection of electrons. However, these experiments encounter limitations because they are required to use electron…
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity…
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the…
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their…
We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow…
Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric response materials. The rise of two-dimensional (2D) materials,…
Multilayer van der Waals (vdWs) semiconductors have great promising application in high-performance optoelectronic devices. However, the photoconductive photodetectors based on layered semiconductors often suffer from large dark current and…
There are several applications which require high position resolution UV imaging. For these applications we have developed and successfully tested a new version of a 2D UV single photon imaging detector based on a microgap RPC. The main…
The integration of light and materials technology is key to the creation of innovative sensing technologies. Sensing of electric and magnetic fields, and temperature with high spatio-temporal resolution is a critical task for the…