相关论文: Temperature Dependence of Volatile Current shoot-u…

Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

The Kondo and Periodic Anderson Model (PAM) are known to provide a microscopic picture of many of the fundamental properties of heavy fermion materials and, more generally, a variety of strong correlation phenomena in $4f$ and $5f$ systems.…

An SRAM Physical Unclonable Function (PUF) can distinguish SRAM modules by analyzing the inherent randomness of their start-up behavior. However, the effectiveness of this technique varies depending on the design and fabrication of the SRAM…

We propose an analytical framework to design actively tunable narrowband thermal emitters at infrared frequencies. We exemplify the proposed design rules using phase-change materials (PCM), considering dielectric-to-dielectric PCMs (e.g.…

Negative differential thermal resistance (NDTR) can be generated for any one-dimensional heat flow with a temperature-dependent thermal conductivity. In a system-independent scaling analysis, the general condition for the occurrence of NDTR…

We evaluate the impact of inference model on uncertainties when using continuous wave Optically Detected Magnetic Resonance (ODMR) measurements to infer temperature. Our approach leverages a probabilistic feedforward inference model…

Particle tracking microrheology (PT-$\mu$r) exploits the thermal motion of embedded particles to probe the local mechanical properties of soft materials. Despite its appealing conceptual simplicity, PT-$\mu$r requires calibration procedures…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…

The current performances of single-board microcontrollers render them attractive not only for basic applications but also for more elaborate projects, amongst which physics teaching or research. In this article, we show how…

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…

In context of laser powder bed fusion (L-PBF), it is known that the properties of the final fabricated product highly depend on the temperature distribution and its gradient over the manufacturing plate. In this paper, we propose a novel…

The state of the art method for fingerprinting digital cameras focuses on the non-uniform output of an array of photodiodes due to the distinct construction of the PN junction when excited by photons. This photo-response non-uniformity…

Recently the memristive electrical transport properties in NbO$_2$ have attracted much attention for their promising application to the neuromorphic computation. At the center of debates is whether the metal-to-insulator transition (MIT)…

Spin qubits associated with color centers are promising platforms for various quantum technologies. However, to be deployed in robust quantum devices, the variations of their intrinsic properties with the external conditions, and in…

Ferroelectric domain wall devices offer a promising route to low-voltage, reconfigurable nanoelectronics by confining currents to nanoscale conducting interfaces within an insulating bulk. However, the potential for resistive heating and…

Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…