相关论文: Strain effects on Phase-Filling Singularities in H…
We report that the doping and temperature dependence of photoemission spectra near the Brillouin zone boundary of Bi2Sr2CaCu2O8+delta exhibit unexpected sensitivity to the superfluid density. In the superconducting state, the photoemission…
The pairing glue of high-$T_{\rm c}$ superconductivity in heavily electron-doped (e-doped) FeSe, in which hole-pockets are absent, has been an important unsolved problem. Here, we focus on a heavily e-doped bulk superconductor…
The ferroelectric properties of nanoscale silicon doped HfO$_2$ promise a multitude of applications ranging from ferroelectric memory to energy-related applications. The reason for the unexpected behavior has not been clearly proven and…
The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples…
Single crystalline Ba(Fe(1-x)TMx)2As2 (TM = Rh, Pd) series have been grown and characterized by structural, thermodynamic and transport measurements. These measurements show that the structural/magnetic phase transitions, found in pure…
We report electronic Raman scattering measurements on Bi$_2$Sr$_2$(Y$_{1-x}$Ca$_x$)Cu$_2$O$_{8+\delta}$ single crystals at different doping levels. The dependence of the spectra on doping and on incoming photon energy is analyzed for…
Recent experiments demonstrated that isovalent doping system gives the similar phase diagram as the heterovalent doped cases. For example, with the phosphorous (P)-doping, the magnetic order in BaFe$_{2}$(As$_{1-x}$P$_{x}$)$_{2}$ compound…
We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces…
We theoretically investigate the effect of <100> uniaxial strain on a Ge-on-Si laser using deformation potentials. We predict a sudden and dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to the Ge gain…
In order to examine to what extent the rigid-band-like electron doping scenario is applicable to the transition metal-substituted Fe-based superconductors, we have performed angle-resolved photoemission spectroscopy studies of…
The superconducting phase of the 2D one-band Hubbard model is studied within the FLEX approximation and by using an Eliashberg theory. We investigate the doping dependence of $T_c$, of the gap function $\Delta ({\bf k},\omega)$ and of the…
The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap,…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
Resistivity and magnetic susceptibility measurements under external pressure were performed on single-crystals NaFe1-xCoxAs (x=0, 0.01, 0.028, 0.075, 0.109). The maximum Tc enhanced by pressure in both underdoped and optimally doped…
Analytical expression for the E1 photon strength functions (PSF) is modified to account for the low-energy enhancement due to nuclear structure effects (presence of low-energy state (LES)). A closed-form expression of the E1 PSF function…
ThFeAsN$_{1-x}$O$_x$ ($0\leq x\leq0.6$) system with heavy electron doping has been studied by the measurements of X-ray diffraction, electrical resistivity, magnetic susceptibility and specific heat. The non-doped compound exhibits…
The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in…
We solve a nonlinear integral equation for the electrostatic potential in doped graphene due to an external charge, arising from a Thomas-Fermi (TF) model for screening by graphene's $\pi$ electron bands. In particular, we study the effects…
The electronic properties of Fe-based superconductors are drastically affected by deformations on their crystal structure introduced by doping and pressure. Here we study single crystals of FeSe$_{1-x}$S$_{x}$ and reveal that local crystal…
We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can…