相关论文: Zinc-Blende group III-V/group IV epitaxy: importan…

The anomalous scaling in the Ginzburg-Landau model for the superconducting phase transition is studied. It is argued that the negative sign of the $\eta$ exponent is a consequence of a special singular behavior in momentum space. The…

The investigation of the magnetic phase transitions in the parent compounds of Fe-based superconductors is regarded essential for an understanding of the pairing mechanism in the related superconducting compounds. Even though the chemical…

The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…

Considerable work has focused on the use of epitaxial strain to engineer domain structures in ferroic materials. Here, we revisit the observed reduction of domain variants in rhombohedral BiFeO3 films on rare-earth scandate substrates.…

Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscut on crystal truncation rods. We develop a model…

Collisional growth of submicron-sized dust grains into macroscopic aggregates is the first step of planet formation in protoplanetary disks. These grains are expected to carry nonzero negative charges in the weakly ionized disks, but its…

We study the domain geometry during spinodal decomposition of a 50:50 binary mixture in two dimensions. Extending arguments developed to treat non-conserved coarsening, we obtain approximate analytic results for the distribution of domain…

We give an analytical description of the spatial distribution of domain walls produced during a biased nonequilibrium phase transition in the vacuum state of a light scalar field. We discuss in detail the spectrum of the associated…

A refined model of the origin of epitaxial tilt on miscut (or vicinal) substrates is explained by employing crystal modeling and reciprocal space analysis. The Nagai tilt model (H. Nagai, J. Appl. Phys., 45, 3789 (1974)) is often cited to…

We study the phase diagram of a class of models in which a generalized cluster interaction can be quenched by Ising exchange interaction and external magnetic field. We characterize the various phases through winding numbers. They may be…

Within the framework of Landau-Ginzburg theory the kinetics of domain structure formation in ferroelectrics that undergo first order phase transition was investigated under the influence of hydrostatic pressure. It was established that…

The internal energy associated with the defect microstructure of strongly deformed crystals provides an important driving force for grain boundary motion during recrystallization. Typical dislocation microstructures are strongly…

Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum…

While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has presented a challenge to ab initio computational approaches.…

We investigate the extended hard-core Bose-Hubbard model on the triangular lattice as a function of spatial anisotropy with respect to both tunneling and nearest-neighbor interaction strength. At half-filling the system can be tuned from…

In this work, we integrate different computational tools based on multi-phase-field simulations to account for the evolution of morphologies and crystallographic defects of Cu/Sn/Cu sandwich interconnect structures that are widely used in…

Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um.…

We consider the growth of a vicinal crystal surface in the presence of a step-edge barrier. For any value of the barrier strength, measured by the length l_es, nucleation of islands on terraces is always able to destroy asymptotically…

Antimonene is a novel two-dimensional topological semiconductor material with strain driven tunable electronic structure for future electronic and spintronic devices, but the growth of clean antimonene is not fully understood. In this work,…

We report Growth--Guided Local Ordering, a novel mechanism of symmetry reduction in disordered crystals. This mechanism operates through the directional ordering of point defects during crystal growth, where defect correlations develop…