相关论文: Extremely large linear magnetoresistance in Antimo…

Large ballistic magnetoresistance (BMR) has been measured in Ni single-atom conductors electrodeposited between microfabricated thin films. These measurements irrefutably eliminate any magnetostriction related artifacts in the BMR effect.

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…

Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in…

We studied the magnetoresistivity of the AM2B2 and A3Rh8B6 (A = Ca, Sr; M = Rh, Ir) compounds within the ranges 1.8<=T<=300 K and 0<=H<=50 kOe. The zero-field resistivity {\rho}0(T) is metallic and follows closely the Bloch-Gr\"uneisen…

Magnetization (M) and magnetoresistance (MR) measurements on polycrystalline R2Mn3Si5 (R = Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) have been carried out in the temperature range of 2 K-300 K, in various applied fields.…

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$…

We have recently reported a new mechanism of colossal magnetoresistance in electron doped Mn oxypnictides NdMnAsO1-xFx. Magnetoresistances of up to -95 percent at 3 K have been observed. Here we show that upon replacing Nd for Pr, the CMR…

We have studied the magnetoresistance (MR) of thin highly oriented pyrolytic graphite mesoscopic samples without and with micro-constrictions of different widths between the voltage electrodes. The MR for fields parallel to the c-axis shows…

We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAs quantum well which, at low temperatures, is manifested by a drop of the resistivity by more than an order of magnitude at a magnetic field $B \approx 1$ kG. In contrast…

The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of order…

The compound Dy7Rh3 ordering antiferromagnetically below (TN=) 59 K has been known to exhibit a temperature (T) dependent electrical resistivity (rho) behavior in the paramagnetic state unusual for intermetallic compounds in the sense that…

We study TmB_4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB_4 is an electronically three-dimensional system. The…

Single crystals of iron(IV) rich oxides SrFeO(3-x) with controlled oxygen content have been studied by Moessbauer spectroscopy, magnetometry, magnetotransport measurements, Raman spectroscopy, and infrared ellipsometry in order to relate…

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials…

The results of dc magnetization, electrical and magnetoresistance and heat capacity measurements (2-300 K) on Tb7Rh3, crystallizing in Th7Fe3-type hexagonal structure, are reported. In this compound, magnetic ordering sets in around 90 K…

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…

We present a theoretical study of the orbital magnetoresistance in a unixial anisotropic metal within the relaxation-time approximation. The appearance of a new dimensionless scale, delta=4t_perp/epsilon_F, allows the possibility of a new…

We have grown La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ single crystals with a laser-diode-heated floating-zone furnace and studied the crystallinity, structure, and magnetoresistance (MR) effect by in-house X-ray Laue diffraction, X-ray powder…