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Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid…

We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced…

材料科学 · 物理学 2017-04-12 D. Simin , H. Kraus , A. Sperlich , T. Ohshima , G. V. Astakhov , V. Dyakonov

Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously…

Solid-state electronic spin systems such as nitrogen-vacancy (NV) color centers in diamond are promising for applications of quantum information, sensing, and metrology. However, a key challenge for such solid-state systems is to realize a…

量子物理 · 物理学 2015-06-12 Nir Bar-Gill , Linh M. Pham , Andrejs Jarmola , Dmitry Budker , Ronald L. Walsworth

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and…

The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of…

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…

Optically accessible solid state defect spins serve as a primary platform for quantum information processing, where precise control of the electron spin and ancillary nuclear spins is essential for operation. Using the nitrogen-vacancy (NV)…

量子物理 · 物理学 2026-02-12 Gergő Thiering , Adam Gali

Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral…

Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

介观与纳米尺度物理 · 物理学 2013-07-01 C. H. Yang , A. Rossi , R. Ruskov , N. S. Lai , F. A. Mohiyaddin , S. Lee , C. Tahan , G. Klimeck , A. Morello , A. S. Dzurak

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of…

介观与纳米尺度物理 · 物理学 2015-01-09 Li-Ping Yang , Christian Burk , Mattias Widmann , Sang-Yun Lee , Jörg Wrachtrup , Nan Zhao

Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…

介观与纳米尺度物理 · 物理学 2021-09-29 Oscar Bulancea Lindvall , Nguyen Tien Son , Igor A. Abrikosov , Viktor Ivády

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67…

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their…

We study the spin-relaxation time in materials where a large spin-orbit coupling (SOC) is present which breaks the spatial inversion symmetry. Such a spin-orbit coupling is realized in zincblende structures and heterostructures with a…

强关联电子 · 物理学 2017-10-23 Lénárd Szolnoki , Annamária Kiss , Balázs Dóra , Ferenc Simon

Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…

We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We…

介观与纳米尺度物理 · 物理学 2015-05-13 M. Prada , R. H. Blick , R. Joynt
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