相关论文: Substrate Dependent Resistive Switching in Amorpho…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching…
The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive…
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…
Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…