相关论文: Effect of Rough Walls on Transport in Mesoscopic $…
We discuss the mass transport of a degenerate Fermi liquid $^3$He film over a rough surface, and the film momentum relaxation time, in the framework of theoretical predictions. In the mesoscopic r\'egime, the anomalous temperature…
I discuss heat and momentum transport in a mesoscopic film of $^3$He, confined by rough walls in the normal Fermi liquid state. Inelastic binary quasiparticle scattering mediated by elastic scattering from the surface roughness gives rise…
I present theoretical calculations of the thermal conductivity of Fermi liquid 3He confined to a slab of thickness of order 100nm. The effect of the roughness of the confining surfaces is included directly in terms of the surface roughness…
The effect of random surface roughness on quantum size effect in thin films is discussed. The conductivity of quantized metal films is analyzed for different types of experimentally identified correlation functions of surface…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
Weyl semimetal (WSM) thin films exhibit distinct electronic properties compared to their bulk counterparts. In this study, we theoretically investigate the nonreciprocal ballistic transport phenomena arising in WSM thin films due to surface…
We have investigated the effect on phonon energy transport in mesoscopic systems and the reduction in the thermal conductance in the quantum limit due to phonon scattering by surface roughness using full 3-dimensional elasticity theory for…
An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
The mobility of surface electrons localized over helium films underlying solid substrates has been evaluated by solving the Boltzmann equation in the time relaxation approximation and the force balance equation in which an effective…
Morphological instability of a planar surface ([111], [011], or [001]) of an ultra-thin metal film is studied in a parameter space formed by three major effects (the quantum size effect, the surface energy anisotropy and the surface stress)…
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness…
The effects of the propagation of particles which have a finite life-time and an according width in their mass spectrum are discussed in the context of transport descriptions. In the first part the coupling of soft photon modes to a source…
The effect of coupling of quantized modes on transport and localization in ultrathin films with quantum size effect (QSE) is discussed. The emphasis is on comparison of films with Gaussian, exponential, and power-law long-range behavior of…
Conductivity of quantized multilayer metal films is analyzed with an emphasis on scattering by rough interlayer interfaces. Three different types of quantum size effect (QSE) in conductivity are predicted. Two of these QSE are similar to…
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to…
Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the…
Quasicrystals are assumed to be electronically stabilized by a Hume-Rothery type mechanism. This explains most of the peculiar properties of quasicrystals. The stabilization is investigated by electronic transport properties, as they depend…
We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong…
The detailed derivation of a theory for transport in quasi-two-dimensional metals, with small-angle elastic scattering and angle-independent inelastic scattering is presented. The transport equation is solved for a model Fermi surface…