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It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type…

硬件体系结构 · 计算机科学 2019-10-21 Saugata Ghose , Tianshi Li , Nastaran Hajinazar , Damla Senol Cali , Onur Mutlu

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

密码学与安全 · 计算机科学 2019-03-28 Onur Mutlu

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known…

密码学与安全 · 计算机科学 2022-10-25 Hasan Hassan , Yahya Can Tugrul , Jeremie S. Kim , Victor van der Veen , Kaveh Razavi , Onur Mutlu

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…

硬件体系结构 · 计算机科学 2017-06-29 Yixin Luo , Saugata Ghose , Tianshi Li , Sriram Govindan , Bikash Sharma , Bryan Kelly , Amirali Boroumand , Onur Mutlu

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

硬件体系结构 · 计算机科学 2017-12-25 Kevin K. Chang

Moore's law has long served the semiconductor industry as the driving force for producing ever-advancing electronics technologies. However, given the economic implications and technological challenges associated with the present…

材料科学 · 物理学 2025-12-11 Andreas Tsiamis , Spyros Stathopoulos , Themis Prodromakis

Production machine learning systems are consistently under attack by adversarial actors. Various deep learning models must be capable of accurately detecting fake or adversarial input while maintaining speed. In this work, we propose one…

机器学习 · 计算机科学 2021-06-15 Matthew Ciolino , Josh Kalin , David Noever

Rowhammer has drawn much attention from both academia and industry in the past years as rowhammer exploitation poses severe consequences to system security. Since the first comprehensive study of rowhammer in 2014, a number of rowhammer…

密码学与安全 · 计算机科学 2024-05-02 Zhi Zhang , Decheng Chen , Jiahao Qi , Yueqiang Cheng , Shijie Jiang , Yiyang Lin , Yansong Gao , Surya Nepal , Yi Zou , Jiliang Zhang , Yang Xiang

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read disturbance bitflip) to securely and performance- and…

硬件体系结构 · 计算机科学 2026-03-16 Ataberk Olgun , F. Nisa Bostanci , Ismail Emir Yuksel , Haocong Luo , Minesh Patel , A. Giray Yaglikci , Onur Mutlu

The emerging magneto-resistive RAM (MRAM) has considerable potential to become a universal memory technology because of its several advantages: unlimited endurance, lower read/write latency, ultralow-power operation, high-density, and CMOS…

新兴技术 · 计算机科学 2021-04-02 Farah Ferdaus , B. M. S. Bahar Talukder , Mehdi Sadi , Md Tauhidur Rahman

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

介观与纳米尺度物理 · 物理学 2018-04-11 Yang Lu , Jung Ho Yoon , Yanhao Dong , I-Wei Chen

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

Data recovery has long been a focus of the electronics industry for decades by security experts, focusing on hard disk recovery, a type of non-volatile memory. Unfortunately, none of the existing research, neither from academia, industry,…

密码学与安全 · 计算机科学 2022-08-08 Joshua Hovanes , Yadi Zhong , Ujjwal Guin

Credit card fraud has emerged as major problem in the electronic payment sector. In this survey, we study data-driven credit card fraud detection particularities and several machine learning methods to address each of its intricate…

机器学习 · 计算机科学 2020-10-14 Yvan Lucas , Johannes Jurgovsky

Rowhammer is a serious security problem of contemporary dynamic random-access memory (DRAM) where reads or writes of bits can flip other bits. DRAM manufacturers add mitigations, but don't disclose details, making it difficult for customers…

密码学与安全 · 计算机科学 2022-12-01 Amir Naseredini , Martin Berger , Matteo Sammartino , Shale Xiong

RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics.…

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

材料科学 · 物理学 2023-06-21 Farhana Yasmin Rahman , Debajyoti Bhattacharjee , Syed Arshad Hussain

Memory vulnerabilities are a major threat to many computing systems. To effectively thwart spatial and temporal memory vulnerabilities, full logical memory safety is required. However, current mitigation techniques for memory safety are…

密码学与安全 · 计算机科学 2021-03-10 Pascal Nasahl , Robert Schilling , Mario Werner , Jan Hoogerbrugge , Marcel Medwed , Stefan Mangard