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We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature…

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…

应用物理 · 物理学 2019-05-22 Serena Rollo , Dipti Rani , Renaud Leturcq , Wouter Olthuis , César Pascual García

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…

仪器与探测器 · 物理学 2019-06-27 Francesco Bellando , Ali Saeidi , Adrian M. Ionescu

This work presents the development of an electronic system for the electrical characterization of pH sensors based on the extended gate field effect transistor (EGFET). We designed an electronic circuit with a microcontroller (PIC15F14K50)…

仪器与探测器 · 物理学 2015-06-15 Pablo Diniz Batista

Given the many and varied roles of ions in living organisms, biocompatible organic ion sensors are a matter of considerable interest. In this work, simple, low-voltage, solid-state hygroscopic insulator field effect transistors (HIFETs)…

应用物理 · 物理学 2021-11-10 Joshua N. Arthur , Soniya D. Yambem

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…

Here, an ultra-small size, simple and inexpensive metal oxide semiconductor field effect transistor (MOSFET)-integrated needle type EGFET pH microsensor was fabricated. The EGFET pH microsensor has the potential to be applied to fast and…

仪器与探测器 · 物理学 2021-05-17 Mustafa Şen , Fikri Seven

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging frequency ranges, for a field accustomed to…

应用物理 · 物理学 2019-05-07 Michele Giorgio , Mario Caironi

The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…

应用物理 · 物理学 2019-07-24 Nicolò Zagni , Paolo Pavan , Muhammad Ashraf Alam

In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and…

应用物理 · 物理学 2019-07-26 Serena Rollo , Dipti Rani , Wouter Olthuis , César Pascual García

The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…

系统与控制 · 电气工程与系统科学 2022-08-10 Elmira Moussavi , Dominik Sisejkovic , Animesh Singh , Daniyar Kizatov , Rainer Leupers , Sven Ingebrandt , Vivek Pachauri , Farhad Merchant

We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…

介观与纳米尺度物理 · 物理学 2016-04-20 Yuan Huang , Huidong Zang , Jia-Shiang Chen , Eli A. Sutter , Peter W. Sutter , Chang-Yong Nam , Mircea Cotlet

p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond…

应用物理 · 物理学 2020-12-02 Yuhui Zhang , Michael S. Shur

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…

应用物理 · 物理学 2025-09-05 Vinay Kammarchedu , Heshmat Asgharian , Hossein Chenani , Aida Ebrahimi

Measuring transient functional connectivity is an important challenge in Electroencephalogram (EEG) research. Here, the rich potential for insightful, discriminative information of brain activity offered by high temporal resolution is…

神经元与认知 · 定量生物学 2025-02-11 Om Roy , Yashar Moshfeghi , Agustin Ibanez , Francisco Lopera , Mario A Parra , Keith M Smith

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

介观与纳米尺度物理 · 物理学 2012-07-20 A. N. Vamivakas , Y. Zhao , S. Falt , A. Badolato , J. M. Taylor , M. Atature

Adiabatic quantum-flux-parametron (AQFP) circuits can operate with extremely small energy dissipation (~1 zJ per junction at 5 GHz) and high sensitivity (~1 {\mu}A) owing to adiabatic switching. Thus, AQFP logic is suitable to use as…

应用物理 · 物理学 2021-02-25 Naoki Takeuchi , Taiki Yamae , Hideo Suzuki , Nobuyuki Yoshikawa

Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuron transistors gated by solid-state electrolyte films are fabricated on flexible plastic substrates for biochemical sensing…

材料科学 · 物理学 2015-05-20 Ning Liu , Li Qiang Zhu , Ping Feng , Chang Jin Wan , Yang Hui Liu , Yi Shi , Qing Wan

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

仪器与探测器 · 物理学 2014-10-10 Ran Wang , Yating Zhang , Haiyang Wang , Xiaoxian Song , Lufan Jin , Haitao Dai , Sen Wu , Jianquan Yao

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…

介观与纳米尺度物理 · 物理学 2017-06-01 Yuan Huang , Eli Sutter , Peter Sutter
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