相关论文: Resistive contribution in electrical switching exp…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Transverse magnetoresistance in a ferromagnetic/nonmagnetic/ferromagnetic trilayer originated from charge-spin conversion by anomalous Hall effect is investigated theoretically. Solving the spin diffusion equation in bulk and using the…
Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…
Identifying the intrinsic and extrinsic origins of magneto-transport in spin-orbit coupled systems has long been a central theme in condensed matter physics. However, it has been elusive owing to the lack of an appropriate experimental…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are expected to play a key role in the next generation of current and electric field switched memory and logic devices. In this study we use Kerr microscopy alongside electrical…
The resistivity in magnetic materials has been theoretically shown to depend on the spin-spin correlation function which in turn depends on the magnetic-field, the density of conduction electron, the magnetic ordering stability, etc.…
Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been…
Magnetic anisotropy controls the orientational stability and switching properties of magnetic states, and therefore plays a central role in spintronics. First-principles density-functional-theory calculations are able, in most cases, to…
Antiferromagnets are emerging as promising alternatives to ferromagnets in spintronics applications. A key feature of antiferromagnets is their anisotropic magnetoresistance (AMR), which has the potential to serve as a sensitive marker for…
The electrical resistivity including the Kondo resistivity increase at low temperature is calculated for thin films of dilute magnetic alloys. Assuming that in the non-magnetic host the spin-orbit interaction is strong like in Au and Cu,…
The interaction between superconductivity and ferromagnetism in thin film superconductor/ferromagnet heterostructures is usually reflected by a change in superconductivity of the S layer set by the magnetic state of the F layers. Here we…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…