相关论文: Resistive contribution in electrical switching exp…
Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
The magnetization of anisotropic quantum dots in the presence of the Rashba spin-orbit interaction has been studied for three interacting electrons in the dot. We observe unique behaviors of magnetization that are direct reflections of the…
The spin-orbit torque switching of ferrimagnetic Gd$_x$(Fe$_{90}$Co$_{10}$)$_{100-x}$ films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…
The dynamic magnetic susceptibility of magnetic materials near ferromagnetic resonance (FMR) is very important in interpreting dc-voltage in electrical detection of FMR. Based on the causality principle and the assumption that the usual…
We theoretically study the spin dynamics in antiferromagnets (AFs)under the influence of an electric current. We identify two different sources of spin-transfer torques that stem from uniform (${\boldsymbol v}_n$) and staggered…
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to…
Direction-dependent anisotropic exchange is a common feature of magnetic systems with strong spin-orbit coupling. Here we study the effect of such exchange upon macroscopic magnetic anisotropy for a face-centered-cubic model. By several…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
We propose an analytical model devoted to explain the anisotropy of the electrical resistance observed below the critical temperature in granular high-Tc superconductors submitted to a magnetic field H. Reported experimental results…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
Spin pumping in ferromagnets provides a source of pure spin currents. Via the inverse spin Hall effect a spin current is converted into a charge current and a corresponding detectable DC-voltage. The ratio of injected spin current to…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…
Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott…
Reading antiferromagnetic order remains a central obstacle for antiferromagnetic memory and logic because zero net magnetisation precludes conventional magnetic readout. Domain imaging typically relies on x-ray magnetic linear dichroism…
Electrical detection of magnetization dynamics in magnetic insulators underpins both fundamental studies of magnon transport and the development of low-loss magnonic devices. In heavy-metal/magnetic-insulator heterostructures, spin pumping…
We present an experimental study of macroscopic and microscopic magnetic anisotropy of a spin tetramer system \cso using torque magnetometry and ESR spectroscopy. Large rotation of macroscopic magnetic axes with temperature observed from…