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相关论文: Gate-tunable Spin-Galvanic Effect in Graphene Topo…

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Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials…

The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…

介观与纳米尺度物理 · 物理学 2019-10-14 Anamul Md. Hoque , Dmitrii Khokhriakov , Bogdan Karpiak , Saroj P. Dash

The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance…

介观与纳米尺度物理 · 物理学 2020-08-10 Franz Herling , C. K. Safeer , Josep Ingla-Aynés , Nerea Ontoso , Luis E. Hueso , Fèlix Casanova

All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit…

介观与纳米尺度物理 · 物理学 2016-07-12 Jifa Tian , Ting-Fung Chung , Ireneusz Miotkowski , Yong P. Chen

Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential…

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…

介观与纳米尺度物理 · 物理学 2020-06-17 C. K. Safeer , Josep Ingla-Aynés , Nerea Ontoso , Franz Herling , Wenjing Yan , Luis E. Hueso , Fèlix Casanova

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling,…

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature.…

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…

介观与纳米尺度物理 · 物理学 2016-10-21 André Dankert , Saroj P. Dash

We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By…

超导电性 · 物理学 2025-12-11 A. S. Ianovskaia , G. A. Bobkov , A. M. Bobkov , I. V. Bobkova

Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by…

The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently…

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…

Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance…

介观与纳米尺度物理 · 物理学 2016-03-30 Kristina Vaklinova , Alexander Hoyer , Marko Burghard , Klaus Kern

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…

介观与纳米尺度物理 · 物理学 2016-03-24 Liang Zhang , Yuan Yan , Han-Chun Wu , Dapeng Yu , Zhi-Min Liao

Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. In order to engineer practical…

介观与纳米尺度物理 · 物理学 2018-06-11 Kenan Song , David Soriano , Aron W. Cummings , Roberto Robles , Pablo Ordejon , Stephan Roche

Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…

介观与纳米尺度物理 · 物理学 2025-08-29 Phillip Mercebach , Sun-Yong Hwang , Bo Lu , Björn Sothmann , Yukio Tanaka , Pablo Burset

Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the…

介观与纳米尺度物理 · 物理学 2024-10-11 Anamul Md. Hoque , Lars Sjöström , Dmitrii Khokhriakov , Bing Zhao , Saroj P. Dash

We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…

Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite…

介观与纳米尺度物理 · 物理学 2025-02-28 Wenxuan Sun , Yequan Chen , Ruijie Xu , Wenzhuo Zhuang , Di Wang , Long Liu , Anke Song , Guozhong Xing , Yongbing Xu , Rong Zhang , Cui-Zu Chang , Xuefeng Wang
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